Stable CW operation of 1.3 µm double-heterostructure laser heteroepitaxially grown on Si

1995 ◽  
Vol 31 (6) ◽  
pp. 455-457 ◽  
Author(s):  
T. Yamada ◽  
H. Mori ◽  
M. Tachikawa ◽  
Y. Kadota ◽  
T. Sasaki ◽  
...  
Keyword(s):  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE

1985 ◽  
Vol 24 (Part 2, No. 3) ◽  
pp. L163-L165 ◽  
Author(s):  
Akira Usui ◽  
Takashi Matsumoto ◽  
Motohiko Inai ◽  
Ikuo Mito ◽  
Kohroh Kobayashi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

High-temperature cw operation of a double-heterostructure laser emitting at 1.3 μm on Si substrate

1995 ◽  
Author(s):  
Takeshi Yamada ◽  
Masami Tachikawa ◽  
Tohru Sasaki ◽  
Hidefumi Mori ◽  
Yoshiaki Kadota ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

Laser‐excited photoluminescence of three‐layer GaAs double‐heterostructure laser material

1975 ◽  
Vol 27 (4) ◽  
pp. 234-237 ◽  
Author(s):  
F. R. Nash ◽  
R. W. Dixon ◽  
P. A. Barnes ◽  
N. E. Schumaker
Keyword(s):  
Laser Material ◽  
Double Heterostructure ◽  
Heterostructure Laser
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