Erbium doped silicon photonic crystals for light sources and amplifiers

2009 ◽  
Author(s):  
Jelena Vuckovic ◽  
Maria Makarova ◽  
Yiyang Gong ◽  
Selcuk Yerci ◽  
Rui Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Sources ◽  
Silicon Photonic ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals Vertical hybrid microcavity based on a polymer layer sandwiched between porous silicon photonic crystals

2009 ◽  
Vol 95 (16) ◽  
pp. 163301 ◽  
Author(s):  
F. Yu. Sychev ◽  
I. E. Razdolski ◽  
T. V. Murzina ◽  
O. A. Aktsipetrov ◽  
T. Trifonov ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Photonic Crystals ◽  
Polymer Layer ◽  
Silicon Photonic

Giant second harmonic generation in microcavities based on porous silicon photonic crystals

JETP Letters ◽  
2001 ◽  
Vol 73 (1) ◽  
pp. 6-9 ◽  
Author(s):  
T. V. Dolgova ◽  
A. I. Maidikovskii ◽  
M. G. Martem’yanov ◽  
G. Marovsky ◽  
G. Mattei ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Photonic Crystals ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Silicon Photonic

Tailoring Patterned Visible-Light Scattering by Silicon Photonic Crystals

2021 ◽  
Author(s):  
Pengfei Cheng ◽  
Ronald Kampmann ◽  
Dong Wang ◽  
Stefan Sinzinger ◽  
Peter Schaaf
Keyword(s):  
Light Scattering ◽  
Photonic Crystals ◽  
Visible Light ◽  
Silicon Photonic

Evaluation of erbium‐doped silicon for optoelectronic applications

1991 ◽  
Vol 70 (6) ◽  
pp. 3223-3228 ◽  
Author(s):  
Y. H. Xie ◽  
E. A. Fitzgerald ◽  
Y. J. Mii
Keyword(s):  
Erbium Doped ◽  
Doped Silicon ◽  
Optoelectronic Applications

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

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