Room-temperature cw GaInAsSb-AlGaAsSb laser diodes for 3µm wavelength range

2003 ◽  
Author(s):  
Markus Grau ◽  
Chun Lin ◽  
Oliver Dier ◽  
Markus-C. Amann
Keyword(s):  
Wavelength Range ◽  
Room Temperature ◽  
Laser Diodes

Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [micro sign]m wavelength range around room temperature

2011 ◽  
Vol 47 (1) ◽  
pp. 46 ◽  
Author(s):  
L. Naehle ◽  
S. Belahsene ◽  
M.von. Edlinger ◽  
M. Fischer ◽  
G. Boissier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Type I ◽  
Continuous Wave Operation ◽  
Dfb Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L551-L552 ◽  
Author(s):  
Sadao Fujii ◽  
Shiro Sakai ◽  
Masayoshi Umeno
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Room Temperature Operation

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Room-Temperature Pulsed Operation of Laser Diodes

1997 ◽  
pp. 223-264 ◽  
Author(s):  
Shuji Nakamura ◽  
Gerhard Fasol
Keyword(s):  
Room Temperature ◽  
Laser Diodes

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range

2007 ◽  
Vol 22 (11) ◽  
pp. 1240-1244 ◽  
Author(s):  
Ben Sherliker ◽  
Matthew Halsall ◽  
Irmantas Kasalynas ◽  
Dalius Seliuta ◽  
Gintaras Valusis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Room Temperature ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Room Temperature Operation

Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 μm wavelength range

2002 ◽  
Author(s):  
Yu. N. Drozdov ◽  
Z. F. Krasil'nik ◽  
D. N. Lobanov ◽  
A. V. Novikov ◽  
Mikhail Y. Valakh ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Self Assembled
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