CW Tm:GdVO 4 laser pumped by 808-nm laser diodes operated at room temperature

2003 ◽  
Author(s):  
Yoshiharu Urata ◽  
Satoshi Wada
Keyword(s):  
Room Temperature ◽  
Laser Diodes

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L551-L552 ◽  
Author(s):  
Sadao Fujii ◽  
Shiro Sakai ◽  
Masayoshi Umeno
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Room Temperature Operation

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Room-Temperature Pulsed Operation of Laser Diodes

1997 ◽  
pp. 223-264 ◽  
Author(s):  
Shuji Nakamura ◽  
Gerhard Fasol
Keyword(s):  
Room Temperature ◽  
Laser Diodes

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5711-5713 ◽  
Author(s):  
Masahiko Kondow ◽  
Shin'ichi Nakatsuka ◽  
Takeshi Kitatani ◽  
Yoshiaki Yazawa ◽  
Makoto Okai
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Laser Diodes ◽  
Temperature Performance

Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

2011 ◽  
Vol 4 (8) ◽  
pp. 082102 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
Sumiko Fujisaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

Room-temperature cw GaInAsSb-AlGaAsSb laser diodes for 3µm wavelength range

2003 ◽  
Author(s):  
Markus Grau ◽  
Chun Lin ◽  
Oliver Dier ◽  
Markus-C. Amann
Keyword(s):  
Wavelength Range ◽  
Room Temperature ◽  
Laser Diodes
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