Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

2009 ◽  
Author(s):  
J. B. Rodriguez ◽  
L. Cerutti ◽  
E. Tournié
Keyword(s):  
Quantum Well ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Laser Operation ◽  
Mid Infrared ◽  
Quantum Well Structure ◽  
Multi Quantum Well

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

1996 ◽  
Vol 69 (26) ◽  
pp. 4056-4058 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Multi Quantum Well ◽  
Structure Laser

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

1997 ◽  
Vol 70 (11) ◽  
pp. 1417-1419 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Multi Quantum Well ◽  
Structure Laser

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

1997 ◽  
Vol 70 (7) ◽  
pp. 868-870 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

scholarly journals Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes

2006 ◽  
Vol 89 (9) ◽  
pp. 091110 ◽  
Author(s):  
A. Krier ◽  
M. Stone ◽  
Q. D. Zhuang ◽  
Po-Wei Liu ◽  
G. Tsai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting ◽  
Multi Quantum Well

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well
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