scholarly journals Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

2010 ◽  
Vol 18 (19) ◽  
pp. 19957 ◽  
Author(s):  
G. Sun ◽  
R. A. Soref ◽  
H. H. Cheng
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Infrared Laser ◽  
Mid Infrared ◽  
Lattice Matched ◽  
Multi Quantum Well

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

scholarly journals Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes

2006 ◽  
Vol 89 (9) ◽  
pp. 091110 ◽  
Author(s):  
A. Krier ◽  
M. Stone ◽  
Q. D. Zhuang ◽  
Po-Wei Liu ◽  
G. Tsai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting ◽  
Multi Quantum Well

Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L73-L75 ◽  
Author(s):  
Tadashi Saku ◽  
Hidetoshi Iwamura ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well ◽  
Room Temperature Operation

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature

2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Multi Quantum Well

2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

2014 ◽  
Vol 35 (10) ◽  
pp. 1205-1209
Author(s):  
安宁 AN Ning ◽  
刘国军 LIU Guo-jun ◽  
李占国 LI Zhan-guo ◽  
常量 CHANG Liang ◽  
魏志鹏 WEI Zhi-peng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well
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