Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

1997 ◽  
Vol 70 (7) ◽  
pp. 868-870 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

1996 ◽  
Vol 69 (26) ◽  
pp. 4056-4058 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Multi Quantum Well ◽  
Structure Laser

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

1997 ◽  
Vol 70 (11) ◽  
pp. 1417-1419 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Multi Quantum Well ◽  
Structure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

1996 ◽  
Vol 69 (20) ◽  
pp. 3034-3036 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Continuous Wave Operation ◽  
Multi Quantum Well ◽  
Structure Laser

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

1997 ◽  
Vol 70 (20) ◽  
pp. 2753-2755 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L184-L186 ◽  
Author(s):  
Masaru Kuramoto ◽  
Chiaki Sasaoka ◽  
Yukihiro Hisanaga ◽  
Akitaka Kimura ◽  
A. Atsushi Yamaguchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

1996 ◽  
Vol 69 (11) ◽  
pp. 1568-1570 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

Sign in / Sign up

Export Citation Format

Share Document