Ambipolar Diffusion in Silicon-on-Insulator Studied by Optical Pump-Probe Based on Free Carrier Absorption

2009 ◽  
Author(s):  
Hui Zhao
Keyword(s):  
Free Carrier ◽  
Ambipolar Diffusion ◽  
Silicon On Insulator ◽  
Free Carrier Absorption ◽  
Optical Pump ◽  
Pump Probe ◽  
Carrier Absorption

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

scholarly journals ON THE POSSIBILITY OF AN INTERSUBBAND LASER IN SILICON-ON-INSULATOR

2006 ◽  
Vol 16 (02) ◽  
pp. 411-420
Author(s):  
SERGE LURYI ◽  
ALEX ZASLAVSKY
Keyword(s):  
Quantum Wells ◽  
Lateral Diffusion ◽  
Optical Loss ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Free Carrier Absorption ◽  
Loss Mechanism ◽  
Polysilicon Gate ◽  
Carrier Absorption ◽  
Intersubband Relaxation

As thin Si quantum wells with oxide barriers have become an experimental reality in silicon-on-insulator technology, we discuss the feasibility of a terahertz laser based on an intersubband transition in such a Si quantum well. Electrons tunnel into an upper two-dimensional subband from a thin polysilicon gate through an ultrathin tunneling oxide and are extracted laterally from the Si well by diffusion. Population inversion arises because lateral diffusion to the contacts can be a faster process than intersubband relaxation and also because the in-plane diffusivity in the upper subband is suppressed by the interaction with a nearby subband characterized by a heavy in-plane mass. Thick oxide layers provide optical confinement and the main optical loss mechanism is the weak free-carrier absorption in thin doped regions in the polysilicon gate and substrate. A voltage on the substrate may provide some tunability of the gain peak.

Time-resolved Ellipsometry to Study Extreme Non-equilibrium Electron Dynamics in Nanostructured Semiconductors

2012 ◽  
Vol 1426 ◽  
pp. 395-400
Author(s):  
T. W. Roger ◽  
A. Kaplan
Keyword(s):  
Silicon Nanocrystals ◽  
Crystalline Silicon ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Electron Dynamics ◽  
Silicon Phase ◽  
Time Resolved ◽  
Pump Probe ◽  
Carrier Absorption ◽  
Nanostructured Semiconductors

ABSTRACTWe present a femtosecond pump-probe ellipsometer operating over a spectral range of 1.4 – 1.7 eV with a ∼50fs time resolution. The calibration and preliminary findings of the setup are discussed. We tested the apparatus on bulk crystalline silicon (not shown here) and on silicon nanocrystals embedded in an amorphous silicon phase. The ellipsometric angles (ψ, Δ) were determined as a function of time and wavelength. The results suggest that a simple Drude model of free carrier absorption is not sufficient to explain the findings.

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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