Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

Free Carrier Absorption Loss of Optical Phase Modulator

2012 ◽  
Vol 545 ◽  
pp. 355-358
Author(s):  
Hanim Abdul Razak ◽  
Hazura Haroon ◽  
Mardiana Bidin ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari
Keyword(s):  
Applied Voltage ◽  
Ridge Waveguide ◽  
Free Carrier ◽  
Phase Modulator ◽  
Device Performance ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Electrical Device ◽  
Carrier Absorption ◽  
Simulation Results

The effect of the free carrier absorption loss on the split-ridge waveguide based phase modulator is analyzed at 1.3 and 1.55 µm. The electrical device performance is predicted using the 2-D semiconductor package SILVACO software under DC operation. Based on the simulation results, it is shown that there is a penalty of increased free carrier absorption as the injected electrons and holes are getting higher. Meanwhile, the loss of the device at 1.3 µm is smaller than that of 1.55 µm at an equal applied voltage.

Mitigation of Si nanocrystal free carrier absorption loss at 15 μm in a concentric microdisk structure

2010 ◽  
Vol 35 (13) ◽  
pp. 2182 ◽  
Author(s):  
Elton Marchena ◽  
Brandon Redding ◽  
Tim Creazzo ◽  
Dennis W. Prather
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Si Nanocrystal ◽  
Carrier Absorption

scholarly journals The theoretical direct-band-gap optical gain of Germanium nanowires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Wen Xiong ◽  
Jian-Wei Wang ◽  
Wei-Jun Fan ◽  
Zhi-Gang Song ◽  
Chuan-Seng Tan
Keyword(s):  
Electronic Structures ◽  
Carrier Density ◽  
Doping Concentration ◽  
Optical Gain ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Electron States ◽  
Germanium Nanowires ◽  
Carrier Absorption

AbstractWe calculate the electronic structures of Germanium nanowires by taking the effective-mass theory. The electron and hole states at the Γ-valley are studied via the eight-band k.p theory. For the [111] L-valley, we expand the envelope wave function using Bessel functions to calculate the energies of the electron states for the first time. The results show that the energy dispersion curves of electron states at the L-valley are almost parabolic irrespective of the diameters of Germanium nanowires. Based on the electronic structures, the density of states of Germanium nanowires are also obtained, and we find that the conduction band density of states mostly come from the electron states at the L-valley because of the eight equivalent degenerate L points in Germanium. Furthermore, the optical gain spectra of Germanium nanowires are investigated. The calculations show that there are no optical gain along z direction even though the injected carrier density is 4 × 1019 cm−3 when the doping concentration is zero, and a remarkable optical gain can be obtained when the injected carrier density is close to 1 × 1020 cm−3, since a large amount of electrons will prefer to occupy the low-energy L-valley. In this case, the negative optical gain will be encountered considering free-carrier absorption loss as the increase of the diameter. We also investigate the optical gain along z direction as functions of the doping concentration and injected carrier density for the doped Germanium nanowires. When taking into account free-carrier absorption loss, the calculated results show that a positive net peak gain is most likely to occur in the heavily doped nanowires with smaller diameters. Our theoretical studies are valuable in providing a guidance for the applications of Germanium nanowires in the field of microelectronics and optoelectronics.

scholarly journals ON THE POSSIBILITY OF AN INTERSUBBAND LASER IN SILICON-ON-INSULATOR

2006 ◽  
Vol 16 (02) ◽  
pp. 411-420
Author(s):  
SERGE LURYI ◽  
ALEX ZASLAVSKY
Keyword(s):  
Quantum Wells ◽  
Lateral Diffusion ◽  
Optical Loss ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Free Carrier Absorption ◽  
Loss Mechanism ◽  
Polysilicon Gate ◽  
Carrier Absorption ◽  
Intersubband Relaxation

As thin Si quantum wells with oxide barriers have become an experimental reality in silicon-on-insulator technology, we discuss the feasibility of a terahertz laser based on an intersubband transition in such a Si quantum well. Electrons tunnel into an upper two-dimensional subband from a thin polysilicon gate through an ultrathin tunneling oxide and are extracted laterally from the Si well by diffusion. Population inversion arises because lateral diffusion to the contacts can be a faster process than intersubband relaxation and also because the in-plane diffusivity in the upper subband is suppressed by the interaction with a nearby subband characterized by a heavy in-plane mass. Thick oxide layers provide optical confinement and the main optical loss mechanism is the weak free-carrier absorption in thin doped regions in the polysilicon gate and substrate. A voltage on the substrate may provide some tunability of the gain peak.

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