Elecitrical Properties of Ion Beam Sputtering Grown Epitaxial Yttria Stabilized Zirconia FIlms on Silicon

1990 ◽  
Vol 198 ◽  
Author(s):  
P. Hesto ◽  
C. Pellet ◽  
C. Schwebel ◽  
E. Dupont-Nivet ◽  
A.Le Noxaic
Keyword(s):  
Electric Field ◽  
Ion Beam ◽  
Dielectric Strength ◽  
Yttria Stabilized Zirconia ◽  
Flat Band ◽  
Ion Beam Sputtering ◽  
Stabilized Zirconia ◽  
Large Area ◽  
Beam Sputtering ◽  
Valence Bands

ABSTRACTYttria stabilized zirconia (YSZ) films have been characterized. The refractive index measured by ellipsometry is about 2.1. The breakdown electric field is greater than 4MV/cm for small area capacitors with a decrease for large area capacitors. This dielectric strength is weakly dependent on the film thickness within the range 0.2-1.lμm. The analysis of the 1MHz C(V) curves by the Terman method leads to a density of interface states of the order of 1012cm−2eV−1 in the middle of the bandgap with an increase near the conduction and the valence bands. The sensitivity of zirconia to the irradiations has been characterized by analysing 1MHz C(V). With or without electric field applied during the irradiations, the Flat-Band voltage shifts are lower for YSZ films than for thermal silicon dioxide films (2 times smaller).

Optimization of large area YBa2Cu3O7−x films by single target ion beam sputtering

1991 ◽  
Vol 185-189 ◽  
pp. 2563-2564 ◽  
Author(s):  
A. Gauzzi ◽  
M.L. Lucia ◽  
M. Affronte ◽  
D. Pavuna
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Single Target ◽  
Beam Sputtering

Large area superconducting YBa2Cu3O7-x films grown by single target ion beam sputtering

1991 ◽  
Vol 182 (1-3) ◽  
pp. 57-61 ◽  
Author(s):  
Andrea Gauzzi ◽  
Maria L. Lucía ◽  
Bruce J. Kellett ◽  
Jonathan H. James ◽  
Davor Pavuna
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Single Target ◽  
Beam Sputtering

Angular‐resolved ion‐beam sputtering apparatus for large‐area deposition

1989 ◽  
Vol 60 (8) ◽  
pp. 2657-2665 ◽  
Author(s):  
T. Motohiro ◽  
H. Yamadera ◽  
Y. Taga
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering ◽  
Area Deposition

Electric-field modulation of a Bi-Sr-Ca-Cu-O film with a polymer film as an insulator

1989 ◽  
Vol 169 ◽  
Author(s):  
Shin'ichi Morohashi ◽  
Hideo Suzuki ◽  
Kohtaroh Gotoh ◽  
Norio Fujimaki ◽  
Shinya Hasuo
Keyword(s):  
Electric Field ◽  
Polymer Film ◽  
Ion Beam ◽  
Gate Insulator ◽  
Ion Beam Sputtering ◽  
Gate Electrode ◽  
Etching Technique ◽  
Ion Beam Etching ◽  
Beam Sputtering ◽  
Field Modulation

AbstractWe fabricated the multi layered structure with Au gate electrode/polymer film/Bi-Sr-Ca-Cu-O film to study the electric-field control of high Tc superconductor. A Bi-Sr-Ca-Cu-O(BSCCO) film was fabricated using an ion beam sputtering technique. The plasma polymerization using trif luoroethane gas was used to make the gate insulator. The patterning of the BSCCO film was carried out using an ion beam etching technique. The supercurrent of the structure decreased when the gate voltage was applied to the gate electrode.

Influence of Metal Electrode(Ag,Au,Pt) on the Dielectric and Electrical Properties of HfTaO Capacitors

2011 ◽  
Vol 197-198 ◽  
pp. 1757-1765
Author(s):  
Tao Yu ◽  
Xue Mei Wu ◽  
Lan Jian Zhuge
Keyword(s):  
Leakage Current ◽  
Ion Beam ◽  
Metal Electrode ◽  
Flat Band ◽  
Ion Beam Sputtering ◽  
Pt Electrode ◽  
Mos Capacitors ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

HfTaO-based MOS capacitors with different top electrode (Ag、Au、Pt) were successfully fabricated by dual ion beam sputtering deposition (DIBSD). We presented the effect of different metal gate on the capacity, flat band voltage shift, leakage current and conduction mechanism. It has been found that the Pt-electrode capacitor exhibited the highest accumulation capacitance. In addition, the largest hysteresis loop in Pt/HfTaO/Si capacitor during the forward-and-reverse voltage sweeping from +2.5V to -2.5V was observed. The result indicates the presence of a large amount of fixed charges or oxygen vacancies exist in interface Pt/HfTaO, which is consistent with the prediction from Qf results. It is proved that even though Eotof the Pt-electrode capacitor is lower than that of the Ag, Au-electroded, and that of leakage current still has the smallest value at a high electric field due to Pt with a high enough work function Φms(Pt)=5.65eV.

Large area precision optical coatings by reactive ion beam sputtering

2020 ◽  
Vol 59 (14) ◽  
pp. 4296
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
Kai Starke
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Sign in / Sign up

Export Citation Format

Share Document