Active optical depth resolution improvement of the laser tomographic scanner

1989 ◽  
Vol 28 (4) ◽  
pp. 804 ◽  
Author(s):  
Andreas W. Dreher ◽  
Josef F. Bille ◽  
Robert N. Weinreb
Keyword(s):  
Optical Depth ◽  
Depth Resolution ◽  
Resolution Improvement

Depth resolution improvement of streak tube imaging lidar system using three laser beams

2018 ◽  
Vol 16 (4) ◽  
pp. 041101 ◽  
Author(s):  
Zhaodong Chen Zhaodong Chen ◽  
Rongwei Fan Rongwei Fan ◽  
Guangchao Ye Guangchao Ye ◽  
Tong Luo Tong Luo ◽  
Jiayu Guan Jiayu Guan ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Laser Beams ◽  
Lidar System ◽  
Resolution Improvement ◽  
Streak Tube

Depth resolution improvement of streak tube imaging lidar using optimal signal width

2016 ◽  
Vol 55 (10) ◽  
pp. 103112 ◽  
Author(s):  
Guangchao Ye ◽  
Rongwei Fan ◽  
Wei Lu ◽  
Zhiwei Dong ◽  
Xudong Li ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Resolution Improvement ◽  
Streak Tube ◽  
Optimal Signal

Voyager UVS observations of stellar occultations by the rings of Saturn

1984 ◽  
Vol 75 ◽  
pp. 265-277
Author(s):  
J.B. Holbelg ◽  
W.T. Forrester
Keyword(s):  
Optical Depth ◽  
Distance Scale ◽  
Density Waves ◽  
Ring Density ◽  
Stellar Occultations ◽  
Saturn’S Rings ◽  
Saturn's Rings

ABSTRACTDuring the Voyager 1 and 2 Saturn encounters the ultraviolet spectrometers observed three separate stellar occultations by Saturn's rings. Together these three observations, which sampled the optical depth of the rings at resolutions from 3 to 6 km. can be used to establish a highly accurate distance scale allowing the identification of numerous ring features associated with resonances due to exterior satellites. Three separate observations of an eccentric ringlet near the location of the Titan apsidal resonance are discussed along with other ringlet-resonance associations occurring in the C ring. Density waves occurring in the A and B rings are reviewed and a detailed discussion of the analysis of one of these features is presented.

Lateral resolution of the electron microbeam analysis

1978 ◽  
Vol 36 (1) ◽  
pp. 542-543
Author(s):  
H.J. Dudek
Keyword(s):  
Quantitative Analysis ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Cylindrical Particle ◽  
Correction Procedure ◽  
X Ray ◽  
Element Concentrations ◽  
Microbeam Analysis ◽  
The Matrix

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

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