Depth resolution improvement in AES sputter profiling of Ni/Cr multilayers on rough substrates using two ion beams

1987 ◽  
Vol 10 (1) ◽  
pp. 7-12 ◽  
Author(s):  
S. Hofmann ◽  
A. Zalar
Keyword(s):  
Depth Resolution ◽  
Ion Beams ◽  
Resolution Improvement

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

scholarly journals Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (10) ◽  
pp. 664-669
Author(s):  
Toshiya OGIWARA ◽  
Takaharu NAGATOMI ◽  
Kyung Joong KIM ◽  
Shigeo TANUMA
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Specimen Holder ◽  
High Depth

scholarly journals Новое ограничение разрешения по глубине при послойном элементном анализе методом времяпролетной вторично-ионной масс-спектрометрии: влияние зондирующего ионного пучка

2018 ◽  
Vol 44 (8) ◽  
pp. 11
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.В. Новиков ◽  
П.А. Юнин ◽  
Д.В. Юрасов
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Criterion A ◽  
Ion Mass Spectrometry ◽  
Low Energies ◽  
Elemental Depth ◽  
Secondary Ion

AbstractNew data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.

Depth resolution improvement of streak tube imaging lidar system using three laser beams

2018 ◽  
Vol 16 (4) ◽  
pp. 041101 ◽  
Author(s):  
Zhaodong Chen Zhaodong Chen ◽  
Rongwei Fan Rongwei Fan ◽  
Guangchao Ye Guangchao Ye ◽  
Tong Luo Tong Luo ◽  
Jiayu Guan Jiayu Guan ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Laser Beams ◽  
Lidar System ◽  
Resolution Improvement ◽  
Streak Tube

COMPLEMENTARY TECHNIQUES TO HIGH ENERGY ION BEAM ANALYSIS

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1402-1410
Author(s):  
J. B. METSON ◽  
M. J. GUSTAFSSON
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Polymeric Materials ◽  
Depth Resolution ◽  
High Energy ◽  
Ion Beams ◽  
Secondary Process ◽  
Ion Beam Analysis ◽  
Beam Analysis

Ion beam analysis methods generally rely on either the scattering of a high energy primary particle, or secondary process arising from the stopping of this particle in the substrate. The information typically obtained is the identification and quantitation of elements present, often resolved in terms of their depth distribution. However, there are a variety of techniques which offer complementary information on the structure composition and chemistry of a surface. These are typified by rather softer interactions with the surface, typified by low energy (kV) ion beams or photons, which interact with the surface in rather more complex manner than higher energy ion beams. The combination of energy and momentum transfer for the ion beams, makes these methods less quantitative, but opens up the potential for more chemically detailed information on the nature of the surface. Secondary ion mass spectrometry (SIMS), both static and dynamic, and X-ray Photoelectron Spectroscopy (XPS) will be discussed in some detail. SIMS offers excellent compositional depth profiling capability, but offers poor quantitation, while XPS offers unparalleled chemical detail, but limited lateral and depth resolution. The underlying processes which dictate the strengths and limitations of these techniques are discussed, along with a number of typical applications to the analysis of oxide films and polymeric materials.

Active optical depth resolution improvement of the laser tomographic scanner

1989 ◽  
Vol 28 (4) ◽  
pp. 804 ◽  
Author(s):  
Andreas W. Dreher ◽  
Josef F. Bille ◽  
Robert N. Weinreb
Keyword(s):  
Optical Depth ◽  
Depth Resolution ◽  
Resolution Improvement

Depth resolution improvement of streak tube imaging lidar using optimal signal width

2016 ◽  
Vol 55 (10) ◽  
pp. 103112 ◽  
Author(s):  
Guangchao Ye ◽  
Rongwei Fan ◽  
Wei Lu ◽  
Zhiwei Dong ◽  
Xudong Li ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Resolution Improvement ◽  
Streak Tube ◽  
Optimal Signal
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