The first demonstration of high-speed LiNbO3 thin-film optical modulators operating at the wavelength of 2 μm

2020 ◽  
Author(s):  
Bingcheng Pan ◽  
Jinyao Hu ◽  
Yishu Huang ◽  
Lijia Song ◽  
Jingyi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Optical Modulators

scholarly journals Demonstration of high-speed thin-film lithium-niobate-on-insulator optical modulators at the 2-μm wavelength

2021 ◽  
Author(s):  
Bingcheng Pan ◽  
Jinyao Hu ◽  
Yishu Huang ◽  
lijia song ◽  
Jingyi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Optical Modulators

The Wear Features of a Plasma Thin-Film Coating on High-Speed Steel

2020 ◽  
Vol 41 (2) ◽  
pp. 160-168
Author(s):  
I. A. Rastegaev ◽  
I. I. Rastegaeva ◽  
D. L. Merson ◽  
V. A. Korotkov
Keyword(s):  
Thin Film ◽  
High Speed ◽  
High Speed Steel ◽  
Film Coating ◽  
Thin Film Coating

scholarly journals Advanced Electrode Design for Low-Voltage High-Speed Thin-Film Lithium Niobate Modulators

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Low Voltage ◽  
Electrode Design

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

scholarly journals High-Speed Epitaxy Using Supersonic Molecular Jets

1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres
Keyword(s):  
Thin Film ◽  
Growth Rates ◽  
High Speed ◽  
Film Growth ◽  
Thin Film Growth ◽  
Free Form ◽  
Electrical Measurements ◽  
Growth Technique ◽  
Pulsed Jets ◽  
Gaseous Source

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.

scholarly journals All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2351-2359
Author(s):  
Hao Ouyang ◽  
Haitao Chen ◽  
Yuxiang Tang ◽  
Jun Zhang ◽  
Chenxi Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Optical Networks ◽  
Dominant Role ◽  
Laser Pulses ◽  
Coulomb Interactions ◽  
Optical Modulators ◽  
Dynamic Tuning ◽  
All Optical ◽  
Excitonic Emission

AbstractStrong quantum confinement and coulomb interactions induce tightly bound quasiparticles such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides (TMDs), which play a dominant role in determining their intriguing optoelectronic properties. Thus, controlling the excitonic properties is essential for the applications of TMD-based devices. Here, we demonstrate the all-optical tuning of the local excitonic emission from a monolayer MoS2 hybridized with phase-change material Ge2Sb2Te5 (GST) thin film. By applying pulsed laser with different power on the MoS2/GST heterostructure, the peak energies of the excitonic emission of MoS2 can be tuned up to 40 meV, and the exciton/trion intensity ratio can be tuned by at least one order of magnitude. Raman spectra and transient pump-probe measurements show that the tunability originated from the laser-induced phase change of the GST thin film with charge transferring from GST to the monolayer MoS2. The dynamic tuning of the excitonic emission was all done with localized laser pulses and could be scaled readily, which pave a new way of controlling the excitonic emission in TMDs. Our findings could be potentially used as all-optical modulators or switches in future optical networks.

scholarly journals Improvements Evaluation of High-Speed Electro-Optical Integrated Thin-Film Microwave Coupler SOA-based Space Switch

2018 ◽  
Vol 17 (4) ◽  
pp. 477-485
Author(s):  
Tiago Sutili ◽  
Rafael C. Figueiredo ◽  
Napoleão S. Ribeiro ◽  
Cristiano M. Gallep ◽  
Evandro Conforti
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Microwave Coupler

scholarly journals High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

2014 ◽  
Vol 2 ◽  
Author(s):  
Graham T. Reed ◽  
David J. Thomson ◽  
Frederic Y. Gardes ◽  
Youfang Hu ◽  
Jean-Marc Fedeli ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Modulators ◽  
Pn Junctions
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