High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

1982 ◽  
Vol 18 (22) ◽  
pp. 945 ◽  
Author(s):  
Y. Matsushima ◽  
S. Akiba ◽  
K. Sakai ◽  
Y. Kushiro ◽  
Y. Noda ◽  
...  
Keyword(s):  
High Speed ◽  
Avalanche Photodiode ◽  
Buffer Layers ◽  
Speed Response

High Speed Response Organic Photodetectors with Cascade Buffer Layers

2021 ◽  
pp. 2100539
Author(s):  
Naotoshi Suganuma ◽  
Chul‐Joon Heo ◽  
Daiki Minami ◽  
Sungyoung Yun ◽  
Sungjun Park ◽  
...  
Keyword(s):  
High Speed ◽  
Buffer Layers ◽  
Organic Photodetectors ◽  
Speed Response

scholarly journals Inverted p-down Design for High-Speed Photodetectors

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Communications ◽  
High Speed ◽  
Pulse Amplitude ◽  
Avalanche Photodiode ◽  
Device Fabrication ◽  
Pulse Amplitude Modulation ◽  
Optical Coupling ◽  
Pin Photodiodes

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

P-181L:Late-News Poster: A Novel Optically Compensated Tunable Birefringence (OCTB) Liquid Crystal Electro-optical Device Exhibiting High Speed Response

2014 ◽  
Vol 45 (1) ◽  
pp. 1463-1464 ◽  
Author(s):  
Shunsuke Kobayashi ◽  
Kiyofumi Takeuchi ◽  
Masakazu Kaneoya ◽  
Kunihiko Kotani ◽  
Haruyoshi Takatsu
Keyword(s):  
Liquid Crystal ◽  
High Speed ◽  
Optical Device ◽  
Speed Response

scholarly journals High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

2018 ◽  
Vol E101.C (7) ◽  
pp. 574-580
Author(s):  
Koichi IIYAMA ◽  
Takeo MARUYAMA ◽  
Ryoichi GYOBU ◽  
Takuya HISHIKI ◽  
Toshiyuki SHIMOTORI
Keyword(s):  
High Speed ◽  
Wavelength Region ◽  
Avalanche Photodiode ◽  
Cmos Process ◽  
High Responsivity ◽  
Standard Cmos Process ◽  
Blue Wavelength

scholarly journals Achievement Method of High-Speed Response of Error Prediction Tracking Control for Optical Disk System

2007 ◽  
Vol 127 (9) ◽  
pp. 942-949 ◽  
Author(s):  
Toru Hayano ◽  
Isao Shibutani ◽  
Kiyoshi Ohishi ◽  
Toshimasa Miyazaki ◽  
Daiichi Koide ◽  
...  
Keyword(s):  
Tracking Control ◽  
High Speed ◽  
Optical Disk ◽  
Error Prediction ◽  
Disk System ◽  
Speed Response

scholarly journals The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3399 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
June-Yan Chen ◽  
Jian-Nan Lin ◽  
Chi-Jen Teng ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Speed ◽  
Gain Bandwidth ◽  
Mesa Structure ◽  
Multiplication Gain ◽  
Data Rates ◽  
Field Control ◽  
Side Walls ◽  
Speed Response

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable high multiplication gain and high-speed response thanks to the thickness and concentration of the field-control and multiplication layers. A mesa active region of 45 micrometers was defined using a bromine-based isotropic wet etching solution. The side walls of the mesa were subjected to sulfur treatment before being coated with a thick polyimide layer to reduce current leakage, while lowering capacitance and increasing response speeds. The breakdown voltage (VBR) of the proposed SAGFM APDs was approximately 32 V. Under reverse bias of 0.9 VBR at room temperature, the proposed device achieved dark current of 31.4 nA, capacitance of 0.19 pF and multiplication gain of 9.8. The 3-dB frequency response was 8.97 GHz and the gain-bandwidth product was 88 GHz. A rise time of 42.0 ps was derived from eye-diagrams at 0.9 VBR. There was notable absence of intersymbol-interference and the signals remained error-free at data-rates of up to 12.5 Gbps.

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

2011 ◽  
Vol 1345 ◽  
Author(s):  
Yichun Zhou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
High Speed ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Buffer Layers ◽  
Interface Properties ◽  
Si Substrate ◽  
Device Structure ◽  
Low Leakage

ABSTRACTFerroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

Sign in / Sign up

Export Citation Format

Share Document