scholarly journals Friction Force Measurements of Electron Beam-Cured Polyurethane Acrylate Films by Scanning Probe Microscopy.

2002 ◽  
Vol 59 (7) ◽  
pp. 415-420 ◽  
Author(s):  
Tadakazu MIYATA ◽  
Takehiro YAMAOKA
Keyword(s):  
Electron Beam ◽  
Friction Force ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Force Measurements ◽  
Probe Microscopy ◽  
Polyurethane Acrylate

Surface force measurements between cellulose surfaces using scanning probe microscopy

1997 ◽  
Vol 123-124 ◽  
pp. 369-374 ◽  
Author(s):  
Mark W. Rutland ◽  
Archie Carambassis ◽  
Gerold A. Willing ◽  
Ronald D. Neuman
Keyword(s):  
Scanning Probe Microscopy ◽  
Surface Force ◽  
Scanning Probe ◽  
Force Measurements ◽  
Probe Microscopy

scholarly journals Focused Electron Beam-Based 3D Nanoprinting for Scanning Probe Microscopy: A Review

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 48 ◽  
Author(s):  
Harald Plank ◽  
Robert Winkler ◽  
Christian H. Schwalb ◽  
Johanna Hütner ◽  
Jason D. Fowlkes ◽  
...  
Keyword(s):  
Electron Beam ◽  
Scanning Probe Microscopy ◽  
Surface Characterization ◽  
Scale Up ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Nano Fabrication ◽  
Essential Surface ◽  
Ideal Tool

Scanning probe microscopy (SPM) has become an essential surface characterization technique in research and development. By concept, SPM performance crucially depends on the quality of the nano-probe element, in particular, the apex radius. Now, with the development of advanced SPM modes beyond morphology mapping, new challenges have emerged regarding the design, morphology, function, and reliability of nano-probes. To tackle these challenges, versatile fabrication methods for precise nano-fabrication are needed. Aside from well-established technologies for SPM nano-probe fabrication, focused electron beam-induced deposition (FEBID) has become increasingly relevant in recent years, with the demonstration of controlled 3D nanoscale deposition and tailored deposit chemistry. Moreover, FEBID is compatible with practically any given surface morphology. In this review article, we introduce the technology, with a focus on the most relevant demands (shapes, feature size, materials and functionalities, substrate demands, and scalability), discuss the opportunities and challenges, and rationalize how those can be useful for advanced SPM applications. As will be shown, FEBID is an ideal tool for fabrication/modification and rapid prototyping of SPM-tipswith the potential to scale up industrially relevant manufacturing.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

Sign in / Sign up

Export Citation Format

Share Document