scholarly journals Heavy-ion RBS characterization of multilayer TiNx-SiO2-Si structures

2020 ◽  
Vol 9 ◽  
pp. 315
Author(s):  
X. Aslanoglou ◽  
E. Evangelou ◽  
N. Konofaos ◽  
Ch. Dimitriades ◽  
E. Kossionides ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Heavy Ion ◽  
Electrical Performance ◽  
Multilayer Structures ◽  
Mos Devices

Multilayer structures consisting of TiNx-SiO2-Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS measurements were performed for the characterization of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

2015 ◽  
Vol 821-823 ◽  
pp. 480-483 ◽  
Author(s):  
A.I. Mikhaylov ◽  
Alexey V. Afanasyev ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
Adolf Schöner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Oxide ◽  
Process Optimisation ◽  
Gate Oxides ◽  
Mos Structure ◽  
Mos Devices ◽  
Inversion Channel ◽  
And Inversion ◽  
Thermally Grown

Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.

Characterization of “TEMPOS”: A new Tunable Electronic Material with Pores in Oxide on Silicon

2003 ◽  
Vol 792 ◽  
Author(s):  
Dietmar Fink ◽  
Alexander Petrov ◽  
Kurt Hoppe ◽  
Wolfgang R. Fahrner
Keyword(s):  
Electronic Material ◽  
Heavy Ion ◽  
Oxide Interface ◽  
Ion Tracks ◽  
Mos Devices ◽  
Conducting Materials ◽  
Current Voltage ◽  
Novel Structures ◽  
Track Diameter

ABSTRACTRecently etched heavy ion tracks in MOS devices were filled with (semi)conducting materials to enable charge extraction from, or injection into the conducting channel below the Si/oxide interface, respectively. This leads to a family of novel electronic devices that we denoted as “TEMPOS” structures - that acronym stands for “Tunable Electronic Material with Pores in Oxide on Silicon”. In comparison with MOS-FETs, TEMPOS structures have some unique properties due to their additional parameters such as the track diameter, density, and shape, and the material embedded therein and its spatial distribution. This makes these novel structures much more complex, and it eventually leads to higher compactation of the TEMPOS circuits and to unexpected electronic properties. Depending on the choice of these parameters and the working point of these structures, TEMPOS elements can overtake the function of gatable resistors, condensors, photocells, hygrocells, diodes, sensors, and others. This work concentrates on some basic aspects of TEMPOS and gives some corresponding current /voltage relations and equivalent circuits.

scholarly journals Oxygen Contamination of Multilayer TiNx — SiO2 — Si Structures found by Resonant RBS Analysis

2019 ◽  
Vol 10 ◽  
pp. 20
Author(s):  
X. A. Aslanoglou ◽  
E. Evangelou ◽  
N. Konofaos ◽  
Ch. Dimitriades ◽  
E. Kossionides ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Performance ◽  
Mos Devices ◽  
Layer Structures ◽  
Oxygen Contamination

Multi layer structures consisting of TiN — SiO2 — Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS and resonance reaction analysis were performed for the characterisation of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

2005 ◽  
Vol 483-485 ◽  
pp. 585-588 ◽  
Author(s):  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida ◽  
Y. Takata ◽  
K. Kobayashi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Binding Energy ◽  
Oxide Films ◽  
Photoemission Spectroscopy ◽  
Depth Profiles ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Mos Device

Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The structure of wet oxide/SiC C-face interface was compared with that of dry oxide/SiC C-face, as well as that of dry oxide/SiC Si-face, in order to clarify why a MOS device of SiC C-face achieved good electrical properties. The improvement in electrical properties was confirmed by AR-PES measurements, evidencing differences in binding energy between SiC and the Si4+ components in Si2p and valence band region, and in binding energy between SiC and the CHx components in C1s. The reason for the improvement in electrical property of MOS devices by use of SiC C-face are discussed in terms of depth profiles of oxide films calculated from the AR-PES results.

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

scholarly journals An Investigation of the Physical and Electrical Properties of Knitted Electrodes When Subjected to Multi-Axial Compression and Abrasion

Proceedings ◽  
2021 ◽  
Vol 68 (1) ◽  
pp. 2
Author(s):  
Arash M. Shahidi ◽  
Theodore Hughes-Riley ◽  
Carlos Oliveira ◽  
Tilak Dias
Keyword(s):  
Heart Rate ◽  
Electrical Properties ◽  
Applied Load ◽  
Pressure Sensors ◽  
Electrical Performance ◽  
Electronic Textiles ◽  
Heart Rate Monitors ◽  
Mechanical Loads ◽  
And Performance ◽  
Over Time

Knitted electrodes are a key component to many electronic textiles including sensing devices, such as pressure sensors and heart rate monitors; therefore, it is essential to assess the electrical performance of these knitted electrodes under different mechanical loads to understand their performance during use. The electrical properties of the electrodes could change while deforming, due to an applied load, which could occur in the uniaxial direction (while stretched) or multiaxial direction (while compressed). The properties and performance of the electrodes could also change over time when rubbed against another surface due to the frictional force and generated heat. This work investigates the behavior of a knitted electrode under different loading conditions and after multiple abrasion cycles.

Optimum Design of Inductors Used for Wireless Power Transmission Micro-Module

2004 ◽  
Author(s):  
Chao-Liang Chang ◽  
Uei-Ming Jow ◽  
Chao-Ta Huang ◽  
Hsiang-Chi Liu ◽  
Jr-Yuan Jeng ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Electrical Properties ◽  
Optimum Design ◽  
Thermal Loading ◽  
Power Transmission ◽  
Thermal Strain ◽  
Electrical Performance ◽  
Wireless Power ◽  
Wireless Power Transmission ◽  
Analysis Software

The micro-inductor is a key component in wireless power transmission micro modules. In this paper, an optimum design for the micro-inductor was studied and related MEMS fabrication techniques were also developed. Commercial electromagnetic property analysis software, ANSOFT, was used to screen the main design factors of the micro-inductor. It was found that the high inductance and high quality factors of the micro-inductor implied high power transmission efficiency for the micro-module’s wireless power transmission. The electrical performance of the micro-inductor was affected by the thermal stress and thermal strain induced in the operational environment of the wireless power transmission micro-module. In order to investigate the reliability of the micro-inductor, commercial stress analysis software, ANSYS, was used to calculate thermal stress and thermal strain. The deformed model of the micro-inductor was then imported into ANSOFT in order to calculate its electrical properties. Glass substrate Pyrex 7740 was used to reduce the substrate loss of the magnetic flux of the micro-inductor. The surface micromachining technique, a kind of MEMS processing, was chosen to fabricate the micro-inductor; the coil of the micro-inductor was electroplated with copper to reduce the series resistance. The minimum line width and line space of the coil were 20 μm and 20 μm respectively. Polyimide (PI) was used for supporting the structure of micro-inductors. The maximum shear stress was 74.09MPa and the maximum warpage was 2.197 μm at a thermal loading of 125°C. For the simulated data, the most suitable areas for 31-turn and 48-turn coils were at an area ratio of 1.27 and 2, respectively. The electrical properties of the inductors changed slightly under thermal loading.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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