Silicon Carbide Power Field-Effect Transistors

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 293-298 ◽  
Author(s):  
Jian H. Zhao
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Power Density ◽  
Advantages And Disadvantages ◽  
Power Switches

AbstractSilicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

2005 ◽  
Vol 483-485 ◽  
pp. 593-596 ◽  
Author(s):  
David J. Meyer ◽  
Morgen S. Dautrich ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Resonance ◽  
Trapping Centers

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

2003 ◽  
Vol 42 (Part 2, No. 6B) ◽  
pp. L625-L627 ◽  
Author(s):  
Takeshi Ohshima ◽  
Kin Kiong Lee ◽  
Yuuki Ishida ◽  
Kazutoshi Kojima ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Cubic Silicon Carbide

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 1066-1069 ◽  
Author(s):  
Shinya Sato ◽  
Hidekazu Tanisawa ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Module ◽  
Active Metal ◽  
Switching Characteristics

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

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