Topotactic Preparation of Preferentially Oriented BaTiO3and TiO2Thin Films on Polycrystalline Substrate

2003 ◽  
Vol 32 (1) ◽  
pp. 48-49 ◽  
Author(s):  
Qi Feng ◽  
Koji Kajiyoshi ◽  
Kazumichi Yanagisawa
Keyword(s):  
Polycrystalline Substrate

Martensitic transformation in polycrystalline substrate-constrained and freestanding Ni-Mn-Ga films with Ni and Ga excess

2018 ◽  
Vol 741 ◽  
pp. 1098-1104 ◽  
Author(s):  
S. Shevyrtalov ◽  
H. Miki ◽  
M. Ohtsuka ◽  
A. Grunin ◽  
I. Lyatun ◽  
...  
Keyword(s):  
Martensitic Transformation ◽  
Polycrystalline Substrate

Structural Properties of 300 Å of Iron Films Grown on Polycrystalline Substrate

2019 ◽  
Vol 397 ◽  
pp. 69-75
Author(s):  
Radhia Boukhalfa ◽  
Hichem Farh
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
Diffraction Method ◽  
The Other ◽  
X Ray Diffraction ◽  
Iron Films ◽  
X Ray ◽  
Polycrystalline Substrate

In this manuscript, the structural properties such as the distance inter-reticular of samples is studied, In the fact, four samples were used symbolized as follows: E tAg(Å), the only difference is the thickness of the Silver buffer layer (tAg= 0, 50, 100 and 150 Å) to find out how the thickness of this layer depends on the structural characteristics of the Iron thin layer, all samples are deposited using molecular beam epitaxy (MBE) at room temperature onto Si (100) substrate. The structural properties of all samples examined using X-ray diffraction method at small and high angles. The small angles X-Ray diffraction curves confirmed to us that there is a clear difference between the surface structure of the samples by varying the number of Kiessig Fringes, Also high angles X-Ray diffraction curves assured us this difference through the clear variation in the angular positions of the peaks of Bragg and the distances inter-reticular values from a sample to the other.

scholarly journals Growth of Crystalline Silicon Films on Polycrystalline Substrate by Vacuum Evaporation

Shinku ◽  
1967 ◽  
Vol 10 (9) ◽  
pp. 322-327
Author(s):  
Keizo ISHIWATARI ◽  
Toshio OKA ◽  
Kenji AKIYAMA
Keyword(s):  
Crystalline Silicon ◽  
Vacuum Evaporation ◽  
Silicon Films ◽  
Polycrystalline Substrate

scholarly journals Simulating Epitaxial Textures

1995 ◽  
Vol 23 (4) ◽  
pp. 249-256
Author(s):  
Francis Wagner ◽  
Laurence Lamm ◽  
Didier Deparis
Keyword(s):  
Surface State ◽  
Selection Rules ◽  
Steel Sheets ◽  
Polycrystalline Substrate ◽  
The Way ◽  
Zinc Deposits

The way of calculating the texture of a polycrystalline deposit over a polycrystalline substrate is considered in this paper. The proposed procedure consists in taking into account the epitaxial relationships and in defining some kind of selection rules according to the assumed crystallographic surface state of the substrate. To illustrate the interest of such a procedure, textures are calculated under various conditions and compared with ‘experimental’ textures for electrodeposited zinc deposits over steel sheets.

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