scholarly journals Copper Ion-containing Ionic Liquids Provide Improved Endurance and Switching Voltage Distributions of Conducting-bridge Random Access Memory

2015 ◽  
Vol 44 (11) ◽  
pp. 1578-1580 ◽  
Author(s):  
Akinori Harada ◽  
Hiroki Yamaoka ◽  
Kouhei Watanabe ◽  
Kentaro Kinoshita ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Copper Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Voltage ◽  
Access Memory ◽  
Conducting Bridge ◽  
Voltage Distributions

Improved performance of a conducting-bridge random access memory using ionic liquids

2016 ◽  
Vol 4 (30) ◽  
pp. 7215-7222 ◽  
Author(s):  
A. Harada ◽  
H. Yamaoka ◽  
S. Tojo ◽  
K. Watanabe ◽  
A. Sakaguchi ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Random Access ◽  
Random Access Memory ◽  
Next Generation ◽  
Access Memory ◽  
Promising Candidate ◽  
Improved Performance ◽  
Conducting Bridge

The conducting-bridge random access memory (CB-RAM) is a promising candidate for the next-generation memory.

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1929-1932 ◽  
Author(s):  
Jaesik Yoon ◽  
Joonmyoung Lee ◽  
Hyejung Choi ◽  
Ju-Bong Park ◽  
Dong-jun Seong ◽  
...  
Keyword(s):  
Copper Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Memory Applications

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

2009 ◽  
Vol 95 (11) ◽  
pp. 112110 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jong Ho Lee ◽  
Young Bae Ahn ◽  
Choon Hwan Kim ◽  
Bong Seob Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Voltage ◽  
Access Memory ◽  
Threshold Switching

Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

2017 ◽  
Vol 111 (11) ◽  
pp. 113108 ◽  
Author(s):  
Sridhar Chandrasekaran ◽  
Firman Mangasa Simanjuntak ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Barrier Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CE13 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Atsushi Sakaguchi ◽  
Akinori Harada ◽  
Hiroki Yamaoka ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge
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