Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

2011 ◽  
Vol 58 (5) ◽  
pp. 1352-1360 ◽  
Author(s):  
Shimeng Yu ◽  
H.-S Philip Wong
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Compact Modeling ◽  
Access Memory ◽  
Conducting Bridge

Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

2017 ◽  
Vol 111 (11) ◽  
pp. 113108 ◽  
Author(s):  
Sridhar Chandrasekaran ◽  
Firman Mangasa Simanjuntak ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Barrier Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CE13 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Atsushi Sakaguchi ◽  
Akinori Harada ◽  
Hiroki Yamaoka ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

Improved performance of a conducting-bridge random access memory using ionic liquids

2016 ◽  
Vol 4 (30) ◽  
pp. 7215-7222 ◽  
Author(s):  
A. Harada ◽  
H. Yamaoka ◽  
S. Tojo ◽  
K. Watanabe ◽  
A. Sakaguchi ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Random Access ◽  
Random Access Memory ◽  
Next Generation ◽  
Access Memory ◽  
Promising Candidate ◽  
Improved Performance ◽  
Conducting Bridge

The conducting-bridge random access memory (CB-RAM) is a promising candidate for the next-generation memory.

Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

2015 ◽  
Vol 3 (27) ◽  
pp. 6966-6969 ◽  
Author(s):  
A. Harada ◽  
H. Yamaoka ◽  
R. Ogata ◽  
K. Watanabe ◽  
K. Kinoshita ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Random Access ◽  
Random Access Memory ◽  
Operating Voltage ◽  
Access Memory ◽  
Conducting Bridge ◽  
Enhanced Stability

Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.

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