Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

2017 ◽  
Vol 111 (11) ◽  
pp. 113108 ◽  
Author(s):  
Sridhar Chandrasekaran ◽  
Firman Mangasa Simanjuntak ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Barrier Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CE13 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Atsushi Sakaguchi ◽  
Akinori Harada ◽  
Hiroki Yamaoka ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

Impact of barrier layer on HfO2-based conductive bridge random access memory

2019 ◽  
Vol 114 (9) ◽  
pp. 093105 ◽  
Author(s):  
Chun-An Lin ◽  
Chu-Jie Huang ◽  
Tseung-Yuen Tseng
Keyword(s):  
Barrier Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conductive Bridge
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