scholarly journals Reaction Process of Vanadium Tetrachloride with Ammonia in the Vapor Phase and Properties of the Vanadium Nitride Formed

1982 ◽  
Vol 55 (11) ◽  
pp. 3446-3449 ◽  
Author(s):  
Yuzo Saeki ◽  
Takashi Shimizu ◽  
Akimasa Yajima ◽  
Ryoko Matsuzaki
Keyword(s):  
Vapor Phase ◽  
Reaction Process ◽  
Vanadium Nitride ◽  
Vanadium Tetrachloride

Downstream Plasma Activated Etching of IIIV Compound Semiconductorsa

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Iyer ◽  
D.L. Lile
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Mass Spectrometer ◽  
Vapor Phase ◽  
Compound Semiconductors ◽  
Power Input ◽  
Reaction Process ◽  
Rf Power ◽  
Carrier Gas ◽  
Etch Rates

ABSTRACTWe have demonstrated a novel downstream plasma activated vapor phase etching of III-V compound semiconductors using ethylene di bromide as the etchant. Highly reproducible surfaces and etch rates were obtained by monitoring the reaction process with a mass spectrometer. Etch rates on InP of up to 4500Å/min, at temperatures as low as 160°C, at an rf power input of 25 watts were achieved with no evident damage to the surface as indicated by PL measurements. Apparent activation energy measurements seem to suggest that the etch products might be organometallic in nature, in contrast to inorganic etch products seen in most etching studies. Etching is partially anisotropic and resulted in smoother surfaces when H2 was used as the carrier gas for the etchant instead of N2.

Single-Source Precursors to Vanadium Nitride Thin Films

1993 ◽  
Vol 327 ◽  
Author(s):  
Charles H. Winter ◽  
Valerie C. Viejo ◽  
James W. Proscia
Keyword(s):  
Vanadium Nitride ◽  
Silicon Substrates ◽  
Single Source ◽  
Film Properties ◽  
Single Source Precursors ◽  
Properties And Characterization ◽  
Nitride Coatings ◽  
Solar Control ◽  
Vanadium Tetrachloride ◽  
Vanadium Chloride

AbstractVanadium nitride films reflect infrared radiation and are candidates for solar control coatings for glass. Herein we report our efforts to prepare new precursors to vanadium nitride coatings. Treatment of vanadium tetrachloride with primary alkylamines in dichloromethane affords vanadium chloride amides of the empirical formula [VCI2(NHR)2(NH2R)2]. The characterization and properties of these compounds is presented. The complexes [VC12(NHR)2(NH2R)2] can be sublimed at ca. 100°C (0.1 mmHg) and serve as single-source precursors to vanadium carbonitride films. Films have been deposited in the temperature range of 400-600°C on glass and silicon substrates. The film properties and characterization will be overviewed.

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