Spatially Resolved Spectroscopic Technique for Measuring Optical Properties of Food

Author(s):  
Haiyan Cen ◽  
Renfu Lu ◽  
Nghia Nguyen-Do-Trong ◽  
Wouter Saeys
Author(s):  
Sergey M. Zaytsev ◽  
Marine Amouroux ◽  
Grégoire Khairallah ◽  
Alexey N. Bashkatov ◽  
Valery V. Tuchin ◽  
...  

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.


2013 ◽  
Vol 21 (26) ◽  
pp. 32630 ◽  
Author(s):  
Rodrigo Watté ◽  
Nghia Nguyen Do Trong ◽  
Ben Aernouts ◽  
Chyngyz Erkinbaev ◽  
Josse De Baerdemaeker ◽  
...  

1997 ◽  
Vol 482 ◽  
Author(s):  
M. K. H. Natusch ◽  
G. A. Botton ◽  
R. F. Broom ◽  
P. D. Brown ◽  
D. M. Tricker ◽  
...  

AbstractThe optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.


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