Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties

2002 ◽  
Vol 80 (7) ◽  
pp. 1141-1143 ◽  
Author(s):  
Yong-Hoon Cho ◽  
H. M. Kim ◽  
T. W. Kang ◽  
J. J. Song ◽  
W. Yang
Keyword(s):  
Optical Properties ◽  
Silicon Substrate ◽  
Strong Correlation ◽  
Structural And Optical Properties ◽  
Spatially Resolved

scholarly journals Influence of laser irradiation on optical properties of GaAsBi/GaAs quantum wells

2018 ◽  
Vol 58 (1) ◽  
Author(s):  
Justinas Aleknavičius ◽  
Evelina Pozingytė ◽  
Renata Butkutė ◽  
Arūnas Krotkus ◽  
Gintautas Tamulaitis
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Laser Irradiation ◽  
Intense Laser ◽  
Multiple Quantum ◽  
Spectral Position ◽  
Structural And Optical Properties ◽  
Spatially Resolved ◽  
The Impact ◽  
Sharp Interfaces

This paper is focused on investigation of the impact of laser irradiation on the structural and optical properties of bismide-based multiple quantum wells (MQWs). The MQW structures, composed of 5 GaAsBi quantum wells, 7 nm thick, separated by 10 nm-thick GaAs barriers, were grown by molecular beam epitaxy on GaAs (100)-plane oriented semi-insulating substrates at 330°C temperature. The bismuth content in as-grown GaAsBi wells evaluated from the measurements of HR-XRD rocking curves was about 6%. HR-TEM and AFM studies of the MQWs evidenced sharp interfaces between the wells and barriers, and a smooth, droplet-free surface, respectively. HR-TEM images also evidenced a homogeneous bismuth distribution in the wells. The spatially-resolved photoluminescence study of GaAsBi/GaAs MQWs revealed the enhancement of PL emission efficiency of up to 80% with no shift of the spectral position after intense laser irradiation. The obtained results were explained by improvement of the GaAsBi crystal quality.

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