Porous Silicon in Micromachining Hotplates Aimed for Sensor Applications

1995 ◽  
Vol 46 (1-3) ◽  
pp. 43-46 ◽  
Author(s):  
T. Taliercio ◽  
M. Dilhan ◽  
E. Massone ◽  
A. Foucaran ◽  
A.M. Gué ◽  
...  

2003 ◽  
Vol 197 (2) ◽  
pp. 539-543 ◽  
Author(s):  
C. Tsamis ◽  
A. Tserepi ◽  
A. G. Nassiopoulou

2006 ◽  
Vol 2006 ◽  
pp. 1-7 ◽  
Author(s):  
P. Granitzer ◽  
K. Rumpf ◽  
H. Krenn

Mesoporous silicon structures are fabricated during an anodization process of highly doped n-type silicon in hydrofluoric acid solution. The resulting pores are oriented perpendicular to the surface and exhibit a diameter of about 50 nm and a length up to 50μm, controlled by the etching time. The growth of the pores is self-organized and depends on the crystal orientation of the used silicon wafer. The achieved channels, highly oriented along the (100) direction, are filled with nickel in a second electrochemical step. The deposition process leads to a distribution between high aspect ratio Ni-wires and Ni-particles of the incorporated metal. This achieved (porous silicon/Ni)-nanocomposite system exhibits a twofold switching behavior of the magnetization curve at two different field ranges. This property gives rise to high-magnetic field sensor applications based on a silicon technology.


2002 ◽  
Vol 18 (7) ◽  
pp. 767-771 ◽  
Author(s):  
G. Di Francia ◽  
M. Della Noce ◽  
V. La Ferrara ◽  
L. Lancellotti ◽  
P. Morvillo ◽  
...  

2005 ◽  
Vol 59 (5) ◽  
pp. 222-225 ◽  
Author(s):  
Ivan Jelínek ◽  
Tomáš Chvojka ◽  
Vladimír Vrkoslav ◽  
Jindřich Jindřich ◽  
Miroslav Lorenc ◽  
...  

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