Design Analysis and Electrical Characterisation of Porous Silicon Structure for Sensor Applications

2018 ◽  
Vol 16 (3) ◽  
pp. 188-193 ◽  
Author(s):  
V. S. Selvakumar ◽  
L. Sujatha ◽  
R. Sundar
Keyword(s):  
Porous Silicon ◽  
Design Analysis ◽  
Silicon Structure ◽  
Sensor Applications

Porous silicon membranes for gas-sensor applications

1995 ◽  
Vol 46 (1-3) ◽  
pp. 43-46 ◽  
Author(s):  
T. Taliercio ◽  
M. Dilhan ◽  
E. Massone ◽  
A. Foucaran ◽  
A.M. Gué ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Sensor ◽  
Sensor Applications ◽  
Silicon Membranes

Anodically grown porous silicon structure: formation mechanisms

1995 ◽  
Vol 242 (1-2) ◽  
pp. 202-206 ◽  
Author(s):  
D.M. Soares ◽  
M.C. dos Santos ◽  
O. Teschke
Keyword(s):  
Porous Silicon ◽  
Structure Formation ◽  
Formation Mechanisms ◽  
Silicon Structure

Porous silicon structure studied by nuclear magnetic resonance

1997 ◽  
Vol 70 (2) ◽  
pp. 191-193 ◽  
Author(s):  
D. Petit ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
F. Devreux
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Silicon Structure ◽  
Nuclear Magnetic

A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Operating Speed ◽  
Small Signal ◽  
Bulk Silicon ◽  
Silicon Structure ◽  
Electroluminescent Devices ◽  
Pn Junction ◽  
Photoluminescence Lifetime ◽  
Modulation Speed

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.

Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications

2003 ◽  
Vol 197 (2) ◽  
pp. 539-543 ◽  
Author(s):  
C. Tsamis ◽  
A. Tserepi ◽  
A. G. Nassiopoulou
Keyword(s):  
Porous Silicon ◽  
Thermal Sensor ◽  
Sensor Applications

scholarly journals Ferromagnetic Nanostructures Incorporated in Quasi-One-Dimensional Porous Silicon Channels Suitable for Magnetic Sensor Applications

2006 ◽  
Vol 2006 ◽  
pp. 1-7 ◽  
Author(s):  
P. Granitzer ◽  
K. Rumpf ◽  
H. Krenn
Keyword(s):  
Porous Silicon ◽  
Deposition Process ◽  
Switching Behavior ◽  
Etching Time ◽  
Mesoporous Silicon ◽  
Sensor Applications ◽  
Self Organized ◽  
Nanocomposite System ◽  
Silicon Structures ◽  
Field Sensor

Mesoporous silicon structures are fabricated during an anodization process of highly doped n-type silicon in hydrofluoric acid solution. The resulting pores are oriented perpendicular to the surface and exhibit a diameter of about 50 nm and a length up to 50μm, controlled by the etching time. The growth of the pores is self-organized and depends on the crystal orientation of the used silicon wafer. The achieved channels, highly oriented along the (100) direction, are filled with nickel in a second electrochemical step. The deposition process leads to a distribution between high aspect ratio Ni-wires and Ni-particles of the incorporated metal. This achieved (porous silicon/Ni)-nanocomposite system exhibits a twofold switching behavior of the magnetization curve at two different field ranges. This property gives rise to high-magnetic field sensor applications based on a silicon technology.

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