Single Atom Imaging—Dopant Atoms in Silicon- Based Semiconductor Devices— by Atom Probe Tomography

2013 ◽  
Author(s):  
Koji Inoue ◽  
Yasuyoshi Nagai
Keyword(s):  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Atom Probe ◽  
Single Atom ◽  
Dopant Atoms ◽  
Silicon Based

Industrial application of atom probe tomography to semiconductor devices

2018 ◽  
Vol 148 ◽  
pp. 82-90 ◽  
Author(s):  
Alexander Devin Giddings ◽  
Sebastian Koelling ◽  
Yasuo Shimizu ◽  
Robert Estivill ◽  
Koji Inoue ◽  
...  
Keyword(s):  
Industrial Application ◽  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Atom Probe

Impact of Carbon on Threshold Voltage Shift in MOSFET Studied by 3D Atom Probe Tomography

2017 ◽  
Author(s):  
Ju-Heon Kim ◽  
Euna Ok ◽  
Hyunmi Sim ◽  
Dongkeun Na ◽  
Ho Seok Song ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Atom Probe Tomography ◽  
Analytical Techniques ◽  
Gate Oxide ◽  
Atom Probe ◽  
Single Atom ◽  
Device Performance ◽  
Si Substrate ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Abstract In this paper, impact of carbon on threshold voltage in MOSFET-based device is studied by 3D-atom probe tomography (APT). Carbon is one of most difficult contaminants incorporated from fab-environment to be detected by typical analytical techniques such as TEM-EDS or SIMS. Here, we successfully demonstrated the detection of carbon segregated at gate oxide/Si substrate interface using 3D-APT with single-atom sensitivity and sub-nanometer spatial resolution. It was found that the carbon contaminants have significant effect on the threshold voltage shift (ΔVth), in which ΔVth increases slightly with increasing carbon concentration. The deterioration of device performance is explained by means of which the positively ionized carbons at the interface acting as additional positive charges affecting the inversion to n-channel.

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

2013 ◽  
Vol 6 (4) ◽  
pp. 046502 ◽  
Author(s):  
Koji Inoue ◽  
Hisashi Takamizawa ◽  
Yasuo Shimizu ◽  
Fumiko Yano ◽  
Takeshi Toyama ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Three Dimensional ◽  
Atom Probe ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Atomic-Scale Phase Composition through Multivariate Statistical Analysis of Atom Probe Tomography Data

2011 ◽  
Vol 17 (3) ◽  
pp. 418-430 ◽  
Author(s):  
Michael R. Keenan ◽  
Vincent S. Smentkowski ◽  
Robert M. Ulfig ◽  
Edward Oltman ◽  
David J. Larson ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Multivariate Statistical Analysis ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Atomic Scale ◽  
Single Atom ◽  
Chemical Information ◽  
Laptop Computer ◽  
Multivariate Statistical ◽  
Tomography Data

AbstractWe demonstrate for the first time that multivariate statistical analysis techniques can be applied to atom probe tomography data to estimate the chemical composition of a sample at the full spatial resolution of the atom probe in three dimensions. Whereas the raw atom probe data provide the specific identity of an atom at a precise location, the multivariate results can be interpreted in terms of the probabilities that an atom representing a particular chemical phase is situated there. When aggregated to the size scale of a single atom (∼0.2 nm), atom probe spectral-image datasets are huge and extremely sparse. In fact, the average spectrum will have somewhat less than one total count per spectrum due to imperfect detection efficiency. These conditions, under which the variance in the data is completely dominated by counting noise, test the limits of multivariate analysis, and an extensive discussion of how to extract the chemical information is presented. Efficient numerical approaches to performing principal component analysis (PCA) on these datasets, which may number hundreds of millions of individual spectra, are put forward, and it is shown that PCA can be computed in a few seconds on a typical laptop computer.

scholarly journals Sample Preparation and Analysis of Aggregated ‘Single Atom Alloy’ Nanoparticles by Atom Probe Tomography

2017 ◽  
Vol 23 (S1) ◽  
pp. 1906-1907 ◽  
Author(s):  
Cédric Barroo ◽  
Austin J. Akey ◽  
Junjun Shan ◽  
Maria Flytzani-Stephanopoulos ◽  
David C. Bell
Keyword(s):  
Sample Preparation ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Single Atom ◽  
Alloy Nanoparticles ◽  
Single Atom Alloy

Atom Probe Tomography on Semiconductor Devices

2016 ◽  
Vol 3 (12) ◽  
pp. 1500713 ◽  
Author(s):  
Mansoor Ali Khan ◽  
Simon P. Ringer ◽  
Rongkun Zheng
Keyword(s):  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Atom Probe

Atom-Probe-Tomographic Studies on Silicon-Based Semiconductor Devices

2012 ◽  
Vol 20 (5) ◽  
pp. 38-44 ◽  
Author(s):  
Koji Inoue ◽  
Ajay Kumar Kambham ◽  
Dominique Mangelinck ◽  
Dan Lawrence ◽  
David J. Larson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
High Sensitivity ◽  
Atom Probe ◽  
Atomic Scale ◽  
Specimen Preparation ◽  
Silicon Based

The development of laser-assisted atom probe tomography (APT) and specimen preparation techniques using a focused ion beam equipped with high-resolution scanning electron microscopy (SEM) has significantly advanced the characterization of semiconductor devices by APT. The capability of APT to map out elements in devices at the atomic scale with high sensitivity meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region.

scholarly journals Prospects for Atom Probe Tomography of Commercial Semiconductor Devices

2011 ◽  
Vol 17 (S2) ◽  
pp. 752-753 ◽  
Author(s):  
D Larson ◽  
D Lawrence ◽  
D Olson ◽  
T Prosa ◽  
D Reinhard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Semiconductor Devices ◽  
Atom Probe

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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