Power Semiconductor Devices

Preface to the Special Issue on ^|^ldquo;Current Technologies and Applications on Power Semiconductor Devices ^|^mdash;Silicon and Wide Bandgap Semiconductors^|^mdash;^|^rdquo;

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.130.911 ◽

2010 ◽

Vol 130 (6) ◽

pp. 911-911

Author(s):

Mutsuhiro Mori

Keyword(s):

Semiconductor Devices ◽

Wide Bandgap ◽

Special Issue ◽

Wide Bandgap Semiconductors ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Bandgap Semiconductors

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Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.134.432 ◽

2014 ◽

Vol 134 (6) ◽

pp. 432-433

Author(s):

Masahiro Sato ◽

Akiko Kumada ◽

Kunihiko Hidaka ◽

Keisuke Yamashiro ◽

Yuji Hayase ◽

...

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Introduction: Applications Roadmap of GaN Power Semiconductor Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.139.76 ◽

2019 ◽

Vol 139 (2) ◽

pp. 76-79

Author(s):

Masayoshi YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Laser synthesized silicon carbide power semiconductor devices

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059204 ◽

1998 ◽

Author(s):

Nathaniel R. Quick

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Junction Temperature Control Strategy for Lifetime Extension of Power Semiconductor Devices

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ◽

10.23919/epe20ecceeurope43536.2020.9215718 ◽

2020 ◽

Author(s):

Johannes Ruthardt ◽

Hendrik Schulte ◽

Philipp Ziegler ◽

Manuel Fischer ◽

Maximilian Nitzsche ◽

...

Keyword(s):

Temperature Control ◽

Control Strategy ◽

Semiconductor Devices ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Lifetime Extension

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Fusible Link Technology for Power Semiconductor Devices

10.21236/ada244110 ◽

1991 ◽

Author(s):

Prasad Venkatraman ◽

B. J. Baliga

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

High Power ◽

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360252 ◽

2020 ◽

Author(s):

Nobuo SATOH ◽

Atsushi DOI ◽

Hidekazu YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Scanning Probe Microscope ◽

Scanning Probe ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Probe Microscope

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System-In-Package Approach for Ultra-High-Power Semiconductor Devices

2006 International Conference on Electronic Materials and Packaging ◽

10.1109/emap.2006.4430564 ◽

2006 ◽

Author(s):

Jeffrey Chen

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Power loss and junction temperature analysis of power semiconductor devices

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370) ◽

10.1109/ias.1999.800030 ◽

2003 ◽

Cited By ~ 1

Author(s):

Dewei Xu ◽

Haiwei Lu ◽

Lipei Huang ◽

S. Azuma ◽

M. Kimata ◽

...

Keyword(s):

Power Loss ◽

Semiconductor Devices ◽

Junction Temperature ◽

Temperature Analysis ◽

Power Semiconductor ◽

Power Semiconductor Devices

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