Interface adhesion: Measurement and analysis

1999 ◽  
Author(s):  
Neelkanth G. Dhere ◽  
Kaustubh S. Gadre ◽  
Nachiket R. Raravikar ◽  
Shashank R. Kulkarni ◽  
Piyush S. Jamkhandi ◽  
...  

2007 ◽  
Vol 990 ◽  
Author(s):  
Shoji Kamiya ◽  
Hitoshi Arakawa ◽  
Hiroshi Shimomura ◽  
Masaki Omiya

ABSTRACTAdhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.


2011 ◽  
Vol 2011.24 (0) ◽  
pp. 9-11
Author(s):  
Nobuyuki SHISHIDO ◽  
Chuantong CHEN ◽  
Shoji KAMIYA ◽  
Masaki OMIYA ◽  
Hisashi SATO ◽  
...  

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