Pulsed Measurements

Author(s):  
Anthony Parker ◽  
James Rathmell ◽  
Jonathan Scott
Keyword(s):  
2005 ◽  
Vol 483-485 ◽  
pp. 889-892 ◽  
Author(s):  
Martin Domeij ◽  
Erik Danielsson ◽  
Hyung Seok Lee ◽  
Carl Mikael Zetterling ◽  
Mikael Östling

The current gain (b) of 4H-SiC BJTs as function of collector current (IC) has been investigated by DC and pulsed measurements and by device simulations. A measured monotonic increase of b with IC agrees well with simulations using a constant distribution of interface states at the 4H-SiC/SiO2 interface along the etched side-wall of the base-emitter junction. Simulations using only bulk recombination, on the other hand, are in poor agreement with the measurements. The interface states degrade the simulated current gain by combined effects of localized recombination and trapped charge that influence the surface potential. Additionally, bandgap narrowing has a significant impact by reducing the peak current gain by about 50 % in simulations.


Author(s):  
Anthony Parker ◽  
James Rathmell ◽  
Jonathan Scott
Keyword(s):  

2006 ◽  
Vol 48 (11) ◽  
pp. 2303-2305 ◽  
Author(s):  
M. Werquin ◽  
D. Ducatteau ◽  
N. Vellas ◽  
E. Delos ◽  
Y. Cordier ◽  
...  

1999 ◽  
Vol 35 (16) ◽  
pp. 1386 ◽  
Author(s):  
S. Trassaert ◽  
B. Boudart ◽  
C. Gaquière ◽  
D. Théron ◽  
Y. Crosnier ◽  
...  
Keyword(s):  

1976 ◽  
Vol 3 (7-8) ◽  
pp. 391-397
Author(s):  
R. Hecker ◽  
S.K. Ahmad ◽  
N. Kirch

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