New drain current model for MESFET/HEMT devices based on pulsed measurements

2006 ◽  
Author(s):  
Guillermo Rafael-Valdivia ◽  
Ronan Brady ◽  
Thomas Brazil
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Pulsed Measurements

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET

2015 ◽  
Vol 103 ◽  
pp. 154-161 ◽  
Author(s):  
Mohammad K. Anvarifard ◽  
Ali A. Orouji
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Fully Depleted ◽  
Soi Mosfet

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET

2018 ◽  
Vol 7 (4) ◽  
pp. 458-472 ◽  
Author(s):  
H. Jaafar ◽  
A. Aouaj ◽  
A. Bouziane ◽  
B. Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current
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