Trap effects studies in GaN MESFETs by pulsed measurements

1999 ◽  
Vol 35 (16) ◽  
pp. 1386 ◽  
Author(s):  
S. Trassaert ◽  
B. Boudart ◽  
C. Gaquière ◽  
D. Théron ◽  
Y. Crosnier ◽  
...  
Keyword(s):  
Pulsed Measurements

Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States

2005 ◽  
Vol 483-485 ◽  
pp. 889-892 ◽  
Author(s):  
Martin Domeij ◽  
Erik Danielsson ◽  
Hyung Seok Lee ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Side Wall ◽  
Interface States ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Poor Agreement ◽  
Collector Current ◽  
Bandgap Narrowing ◽  
Pulsed Measurements ◽  
Emitter Junction ◽  
Constant Distribution

The current gain (b) of 4H-SiC BJTs as function of collector current (IC) has been investigated by DC and pulsed measurements and by device simulations. A measured monotonic increase of b with IC agrees well with simulations using a constant distribution of interface states at the 4H-SiC/SiO2 interface along the etched side-wall of the base-emitter junction. Simulations using only bulk recombination, on the other hand, are in poor agreement with the measurements. The interface states degrade the simulated current gain by combined effects of localized recombination and trapped charge that influence the surface potential. Additionally, bandgap narrowing has a significant impact by reducing the peak current gain by about 50 % in simulations.

Pulsed Measurements

2007 ◽  
pp. 8-1-8-30
Author(s):  
Anthony Parker ◽  
James Rathmell ◽  
Jonathan Scott
Keyword(s):  
Pulsed Measurements

Pulsed Measurements

2002 ◽  
Author(s):  
Anthony Parker ◽  
James Rathmell ◽  
Jonathan Scott
Keyword(s):  
Pulsed Measurements

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

2006 ◽  
Vol 48 (11) ◽  
pp. 2303-2305 ◽  
Author(s):  
M. Werquin ◽  
D. Ducatteau ◽  
N. Vellas ◽  
E. Delos ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Temperature ◽  
Gan Hemts ◽  
Pulsed Measurements

Pulsed measurements with a low absorption-reflector critical assembly

1976 ◽  
Vol 3 (7-8) ◽  
pp. 391-397
Author(s):  
R. Hecker ◽  
S.K. Ahmad ◽  
N. Kirch
Keyword(s):  
Critical Assembly ◽  
Pulsed Measurements
Sign in / Sign up

Export Citation Format

Share Document