Experimental and Simulation Current–Voltage Characteristic of High Electron Mobility Transistor Based on AlGaN/GaN Using ATLAS TCAD Device Simulator

2018 ◽  
Vol 16 (4) ◽  
pp. 288-292
Author(s):  
N. Mordi ◽  
M. Chellali ◽  
Z. Benamara
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Voltage Characteristic ◽  
High Electron ◽  
Current Voltage Characteristic ◽  
High Electron Mobility ◽  
Current Voltage

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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