scholarly journals Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]

2015 ◽  
Vol 106 (21) ◽  
pp. 219902
Author(s):  
Burcu Ozden ◽  
Chungman Yang ◽  
Fei Tong ◽  
Min P. Khanal ◽  
Vahid Mirkhani ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ultra Violet ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Current Voltage ◽  
Photo Current

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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