Preparation and Characterization of Thermoelectric Thin-Film Devices Consisting of Co-Evaporated Bi2Te3 and Sb2Te3 Films

2015 ◽  
Vol 7 (1) ◽  
pp. 144-150 ◽  
Author(s):  
Jae-Hwan Kim ◽  
Tae-Sung Oh
Keyword(s):  
Thin Film ◽  
Thermoelectric Thin Film ◽  
Thin Film Devices

Fabrication of Flexible Thermoelectric Thin Film Devices by Inkjet Printing

Small ◽  
2014 ◽  
Vol 10 (17) ◽  
pp. 3551-3554 ◽  
Author(s):  
Ziyang Lu ◽  
Michael Layani ◽  
Xiaoxu Zhao ◽  
Li Ping Tan ◽  
Ting Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Thermoelectric Thin Film ◽  
Flexible Thermoelectric ◽  
Thin Film Devices

Electronic characterization of new c-Si/a-Si:H/Pt thin film devices

1989 ◽  
Vol 174 ◽  
pp. 203-207
Author(s):  
S. Belkouch ◽  
E. Gheeraert ◽  
A. Deneuville
Keyword(s):  
Thin Film ◽  
Thin Film Devices

scholarly journals CISSY: A station for preparation and surface/interface analysis of thin film materials and devices

2016 ◽  
Vol 2 ◽  
Author(s):  
Iver Lauermann ◽  
Alexander Steigert
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X Ray Absorption ◽  
Thin Film Devices

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.

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