Design, fabrication and characterization of organic thin film devices (OLEDs and OTFTs) based on Pt(II) complexes

2007 ◽  
Author(s):  
Chi-chuen, Cecil Cheung
Keyword(s):  
Thin Film ◽  
Organic Thin Film ◽  
Fabrication And Characterization ◽  
Thin Film Devices

Bottom Contact Ambipolar Organic Thin Film Transistors Based on C60/Pentacene Heterostructure

2006 ◽  
Vol 965 ◽  
Author(s):  
Kaname Kanai ◽  
Suidong Wang ◽  
Kazuhiko Seki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
High Electron ◽  
Organic Thin Film ◽  
Bottom Contact ◽  
Transfer Characteristics ◽  
Fabrication And Characterization ◽  
Ambipolar Transport

ABSTRACTWe report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.

scholarly journals CISSY: A station for preparation and surface/interface analysis of thin film materials and devices

2016 ◽  
Vol 2 ◽  
Author(s):  
Iver Lauermann ◽  
Alexander Steigert
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X Ray Absorption ◽  
Thin Film Devices

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.

Sign in / Sign up

Export Citation Format

Share Document