Growth, Structural and Optical Properties of Well-Crystalline Al-Doped ZnO Nanowire and Their Based Field Effect Transistor (FET)

2011 ◽  
Vol 3 (5) ◽  
pp. 719-724 ◽  
Author(s):  
S. H. Kim ◽  
Ahmad Umar ◽  
S. H. Al-Heniti ◽  
A. Al-Hajry ◽  
A. A. Al-Ghamdi
2019 ◽  
Vol 60 ◽  
pp. 94-112 ◽  
Author(s):  
Nonofo M.J. Ditshego

The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.


2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  

2015 ◽  
Vol 117 (16) ◽  
pp. 164308 ◽  
Author(s):  
Haolei Qian ◽  
Yewu Wang ◽  
Yanjun Fang ◽  
Lin Gu ◽  
Ren Lu ◽  
...  

APL Materials ◽  
2017 ◽  
Vol 5 (8) ◽  
pp. 086111 ◽  
Author(s):  
Zheng Zhang ◽  
Junli Du ◽  
Bing Li ◽  
Shuhao Zhang ◽  
Mengyu Hong ◽  
...  

2012 ◽  
Vol 520 (9) ◽  
pp. 3624-3628 ◽  
Author(s):  
Minhyeok Choe ◽  
Woong-Ki Hong ◽  
Woojin Park ◽  
Jongwon Yoon ◽  
Gunho Jo ◽  
...  

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