UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

2012 ◽  
Vol 520 (9) ◽  
pp. 3624-3628 ◽  
Author(s):  
Minhyeok Choe ◽  
Woong-Ki Hong ◽  
Woojin Park ◽  
Jongwon Yoon ◽  
Gunho Jo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Proton Irradiation ◽  
Zno Nanowire ◽  
Effect Transistor

High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

2015 ◽  
Vol 117 (16) ◽  
pp. 164308 ◽  
Author(s):  
Haolei Qian ◽  
Yewu Wang ◽  
Yanjun Fang ◽  
Lin Gu ◽  
Ren Lu ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
Effect Transistor

Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

2010 ◽  
Vol 87 (1) ◽  
pp. 10-14 ◽  
Author(s):  
Sang-Won Lee ◽  
Moon-Ho Ham ◽  
Jyoti Prakash Kar ◽  
Woong Lee ◽  
Jae-Min Myoung
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Air Gap ◽  
Zno Nanowire ◽  
Effect Transistor

Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

2012 ◽  
Vol 98 ◽  
pp. 343-346 ◽  
Author(s):  
Zongni Yao ◽  
Weijie Sun ◽  
Wuxia Li ◽  
Haifang Yang ◽  
Junjie Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
High K ◽  
Dual Gate ◽  
Effect Transistor

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

2006 ◽  
Vol 89 (26) ◽  
pp. 263102 ◽  
Author(s):  
S. N. Cha ◽  
J. E. Jang ◽  
Y. Choi ◽  
G. A. J. Amaratunga ◽  
G. W. Ho ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Zno Nanowire ◽  
Gate Electrodes ◽  
Effect Transistor

NiOx Schottky-gated ZnO nanowire metal–semiconductor field effect transistor: fast logic inverter and photo-detector

2014 ◽  
Vol 2 (22) ◽  
pp. 4428 ◽  
Author(s):  
Syed Raza Ali Raza ◽  
Seyyed Hossein Hosseini Shokouh ◽  
Young Tack Lee ◽  
Ryong Ha ◽  
Heon-Jin Choi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Zno Nanowire ◽  
Effect Transistor

scholarly journals ZnO Nanowire Field Effect Transistor for Biosensing: A Review

2019 ◽  
Vol 60 ◽  
pp. 94-112 ◽  
Author(s):  
Nonofo M.J. Ditshego
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Binding ◽  
Zno Nanowire ◽  
Long Time ◽  
Effect Transistor ◽  
Doped Zno ◽  
P Type ◽  
Intense Research

The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.

Sign in / Sign up

Export Citation Format

Share Document