High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

2015 ◽  
Vol 117 (16) ◽  
pp. 164308 ◽  
Author(s):  
Haolei Qian ◽  
Yewu Wang ◽  
Yanjun Fang ◽  
Lin Gu ◽  
Ren Lu ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
Effect Transistor

Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

2012 ◽  
Vol 98 ◽  
pp. 343-346 ◽  
Author(s):  
Zongni Yao ◽  
Weijie Sun ◽  
Wuxia Li ◽  
Haifang Yang ◽  
Junjie Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
High K ◽  
Dual Gate ◽  
Effect Transistor

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

2006 ◽  
Vol 89 (26) ◽  
pp. 263102 ◽  
Author(s):  
S. N. Cha ◽  
J. E. Jang ◽  
Y. Choi ◽  
G. A. J. Amaratunga ◽  
G. W. Ho ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Zno Nanowire ◽  
Gate Electrodes ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

1988 ◽  
Vol 9 (5) ◽  
pp. 205-207 ◽  
Author(s):  
K.-W. Wang ◽  
C.-L. Cheng ◽  
J. Long ◽  
D. Mitcham
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor
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