LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

2019 ◽  
Vol 14 (8) ◽  
pp. 1133-1142 ◽  
Author(s):  
J. Ajayan ◽  
D. Nirmal ◽  
P. Mohankumar ◽  
L. Arivazhagan ◽  
M. Saravanan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gaas Substrate ◽  
High Speed ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
20 Nm

Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

2014 ◽  
Vol 11 (3-4) ◽  
pp. 844-847 ◽  
Author(s):  
Raphael Brown ◽  
Abdullah Al-Khalidi ◽  
Douglas Macfarlane ◽  
Sanna Taking ◽  
Gary Ternent ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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