scholarly journals Interband mixing between two-dimensional states localized in a surface quantum welland heavy-hole states of the valence band in a narrow-gap semiconductor

1997 ◽  
Vol 55 (19) ◽  
pp. 13062-13065 ◽  
Author(s):  
V. A. Larionova ◽  
A. V. Germanenko
2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.


1973 ◽  
Vol 59 (4) ◽  
pp. 753-767 ◽  
Author(s):  
E. Pitts

We consider a drop of liquid hanging from a horizontal support and sandwiched between two vertical plates separated by a very narrow gap. Equilibrium profiles of such ‘two-dimensional’ drops were calculated by Neumann (1894) for the case when the angle of contact between the liquid and the horizontal support is zero. This paper gives the equilibrium profiles for other contact angles and the criterion for their stability. Neumann showed that, as the drop height increases, its cross-sectional area increases until a maximum is reached. Thereafter, as the height increases, the equilibrium area decreases. This behaviour is shown to be typical of all contact angles. When the maximum area is reached, the total energy is a minimum. It is shown that the drops are stable as long as the height and the area increase together.


2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.


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