Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors

2011 ◽  
Vol 50 (2R) ◽  
pp. 024104 ◽  
Author(s):  
Sun-Jae Kim ◽  
Soo-Yeon Lee ◽  
Young-Wook Lee ◽  
Woo-Geun Lee ◽  
Kap-Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2005 ◽  
Vol 86 (1) ◽  
pp. 013503 ◽  
Author(s):  
H. Q. Chiang ◽  
J. F. Wager ◽  
R. L. Hoffman ◽  
J. Jeong ◽  
D. A. Keszler
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer ◽  
Zinc Tin Oxide
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