Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

2014 ◽  
Vol 6 (14) ◽  
pp. 10941-10945 ◽  
Author(s):  
Christophe Avis ◽  
Hye Rim Hwang ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Tin Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Channel Layer ◽  
Zinc Tin Oxide

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
High Carrier Mobility ◽  
High Carrier

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping

2013 ◽  
Vol 42 (8) ◽  
pp. 2470-2477 ◽  
Author(s):  
Dong-Suk Han ◽  
Jae-Hyung Park ◽  
Yu-Jin Kang ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Bias Stability ◽  
Zinc Tin Oxide

scholarly journals Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

2012 ◽  
Vol 101 (11) ◽  
pp. 113507 ◽  
Author(s):  
Jaeyeong Heo ◽  
Sang Bok Kim ◽  
Roy G. Gordon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Zinc Tin Oxide
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