Effect of Grain Boundary on the Field-Effect Mobility of Microrod Single Crystal Organic Transistors

2014 ◽  
Vol 14 (11) ◽  
pp. 8153-8157
Author(s):  
Jaekyun Kim ◽  
Jingu Kang ◽  
Sangho Cho ◽  
Byungwook Yoo ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
Organic Transistors ◽  
Field Effect Mobility

Temperature Dependence of High-Mobility Poly-Si Tft with Single Grain Boundary

2002 ◽  
Vol 715 ◽  
Author(s):  
In-Hyuk Song ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
High Mobility ◽  
Drain Current ◽  
Field Effect Mobility ◽  
Single Grain ◽  
Increasing Temperature ◽  
Channel Region

AbstractWe have fabricated high-mobility TFTs with large lateral grains and investigated the variation of drain current with increasing temperature. The activation energy of drain current in large grain TFTs is found to be higher under the off-state and lower under the on-state than that in small grain TFTs. The field-effect mobility during the on-state is reduced with increasing temperature due to a lattice scattering inside grain. Because the proposed device has large lateral grain in the channel region, the lattice scattering inside the grain would be dominant, which is similar to single crystal Si MOSFETs.

Anisotropic field effect mobility in single crystal pentacene

2006 ◽  
Vol 88 (25) ◽  
pp. 252106 ◽  
Author(s):  
J. Y. Lee ◽  
S. Roth ◽  
Y. W. Park
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Anisotropic Field

Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Hada ◽  
H. Okabayashi ◽  
S. Saito ◽  
T. Nakamura ◽  
Y. Kawase
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Line Source ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Boundary Density ◽  
Width Direction ◽  
Good Uniformity

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

Non-destructive probing of the anisotropy of field-effect mobility in the rubrene single crystal

2007 ◽  
Vol 157 (6-7) ◽  
pp. 257-260 ◽  
Author(s):  
Mang-Mang Ling ◽  
Colin Reese ◽  
Alejandro L. Briseno ◽  
Zhenan Bao
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Non Destructive

Copper Phthalocyanine Single-crystal Field-effect Transistors Stable Above 100°C

2006 ◽  
Vol 937 ◽  
Author(s):  
Koichi Yamada ◽  
Jun Takeya ◽  
Kunji Shigeto ◽  
Kazuhito Tsukagoshi ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Measured Temperature ◽  
Field Effect Mobility ◽  
Crystal Field Effect ◽  
Activation Type

ABSTRACTIntrinsic charge transport of copper phthalocyanine single-crystal field-effect transistors is measured as function of temperature up to above 100°C. The conduction of the accumulated carriers shows hopping-type transport, so that the field-effect mobility increases with temperature following activation-type temperature dependence throughout the measured temperature region. Due to excellent material stability at the high temperature, the mobility values are precisely reproduced after the heat cycles.

scholarly journals Low-voltage and high-field-effect mobility organic transistors with a polymer insulator

2006 ◽  
Vol 88 (7) ◽  
pp. 072101 ◽  
Author(s):  
Yunseok Jang ◽  
Do Hwan Kim ◽  
Yeong Don Park ◽  
Jeong Ho Cho ◽  
Minkyu Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Low Voltage ◽  
Organic Transistors ◽  
Field Effect Mobility ◽  
Polymer Insulator
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