Photocurable Organic Gate Insulator for the Fabrication of High-Field Effect Mobility Organic Transistors by Low Temperature and Solution Processing

2007 ◽  
Vol 19 (18) ◽  
pp. 2702-2706 ◽  
Author(s):  
T.-W. Lee ◽  
J. H. Shin ◽  
I.-N. Kang ◽  
S. Y. Lee
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Field ◽  
Gate Insulator ◽  
Solution Processing ◽  
Organic Transistors ◽  
Field Effect Mobility

PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

2006 ◽  
Vol 527-529 ◽  
pp. 1047-1050 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Phillippe Godignon ◽  
Jean Camassel ◽  
Narcis Mestres ◽  
Véronique Soulière
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Field Effect ◽  
Gate Insulator ◽  
Interface Trap Density ◽  
Field Effect Mobility ◽  
Plasma Enhanced Cvd ◽  
Favorable Conditions ◽  
Very High ◽  
Deposition Conditions

4H-SiC MOSFET devices with low temperature dry thermal oxidation (1050 °C 1 h) and TEOS plasma enhanced CVD deposited oxides on 4H-SiC substrates have been analysed in this paper. MOSFET transistors have been fabricated on the 4H-SiC (0001) Si face. The mobility improvement (up to 38-45 cm2/Vs) is remarkable compared with standard oxidation (<10 cm2/Vs). In addition, very high (but controversial) field-effect mobilities of around 216 cm2/Vs have also been extracted for MOSFETs fabricated on the (11-20) face. Taking into account the threshold voltage and the sub-threshold slope (S), we can see that we have three different ways to increase the mobility. First, by using (11-20) face material as already proposed. Second, by reducing the interface trap density as done with the low temperature thermal oxidation plus deposited oxide. And third, under the most favorable conditions with adequate TEOS deposition conditions. In this last case, the mobility improvement seems to be related with the gate current leakage more than (or together with) an interface traps reduction of the gate insulator.

scholarly journals Low-voltage and high-field-effect mobility organic transistors with a polymer insulator

2006 ◽  
Vol 88 (7) ◽  
pp. 072101 ◽  
Author(s):  
Yunseok Jang ◽  
Do Hwan Kim ◽  
Yeong Don Park ◽  
Jeong Ho Cho ◽  
Minkyu Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Low Voltage ◽  
Organic Transistors ◽  
Field Effect Mobility ◽  
Polymer Insulator

scholarly journals Side-chain modulation of dithienofluorene-based copolymers to achieve high field-effect mobilities

2017 ◽  
Vol 8 (4) ◽  
pp. 2942-2951 ◽  
Author(s):  
Chia-Hao Lee ◽  
Yu-Ying Lai ◽  
Jhih-Yang Hsu ◽  
Po-Kai Huang ◽  
Yen-Ju Cheng
Keyword(s):  
Field Effect ◽  
High Field ◽  
Side Chain ◽  
Field Effect Mobility

A new polymerPDTFDPP20based on dithieno[3,2-b:6,7-b′]fluorene (DTF) unit was developed. This polymer with a face-on orientation has achieved a high field-effect mobility up to 5 cm2V−1s−1.

scholarly journals Unexpectedly high field-effect mobility of a soluble, low molecular weight oligoquaterthiophene fraction with low polydispersity

2008 ◽  
Vol 95 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Patrick Pingel ◽  
Achmad Zen ◽  
Dieter Neher ◽  
Ingo Lieberwirth ◽  
Gerhard Wegner ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
High Field ◽  
Low Molecular Weight ◽  
Field Effect Mobility

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

Sign in / Sign up

Export Citation Format

Share Document