Direct Observation of Interfacial Morphology in Poly(3-hexylthiophene) Transistors: Relationship between Grain Boundary and Field-Effect Mobility

2009 ◽  
Vol 2 (1) ◽  
pp. 48-53 ◽  
Author(s):  
Danbi Choi ◽  
Sangwoo Jin ◽  
Youngmin Lee ◽  
Se Hyun Kim ◽  
Dae Sung Chung ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Direct Observation ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Interfacial Morphology

Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Hada ◽  
H. Okabayashi ◽  
S. Saito ◽  
T. Nakamura ◽  
Y. Kawase
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Line Source ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Boundary Density ◽  
Width Direction ◽  
Good Uniformity

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

Effect of Grain Boundary on the Field-Effect Mobility of Microrod Single Crystal Organic Transistors

2014 ◽  
Vol 14 (11) ◽  
pp. 8153-8157
Author(s):  
Jaekyun Kim ◽  
Jingu Kang ◽  
Sangho Cho ◽  
Byungwook Yoo ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
Organic Transistors ◽  
Field Effect Mobility

Temperature Dependence of High-Mobility Poly-Si Tft with Single Grain Boundary

2002 ◽  
Vol 715 ◽  
Author(s):  
In-Hyuk Song ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
High Mobility ◽  
Drain Current ◽  
Field Effect Mobility ◽  
Single Grain ◽  
Increasing Temperature ◽  
Channel Region

AbstractWe have fabricated high-mobility TFTs with large lateral grains and investigated the variation of drain current with increasing temperature. The activation energy of drain current in large grain TFTs is found to be higher under the off-state and lower under the on-state than that in small grain TFTs. The field-effect mobility during the on-state is reduced with increasing temperature due to a lattice scattering inside grain. Because the proposed device has large lateral grain in the channel region, the lattice scattering inside the grain would be dominant, which is similar to single crystal Si MOSFETs.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Improved field-effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene

1997 ◽  
Vol 9 (5) ◽  
pp. 389-391 ◽  
Author(s):  
Riadh Hajlaoui ◽  
Gilles Horowitz ◽  
Francis Garnier ◽  
Alexandre Arce-Brouchet ◽  
Laurent Laigre ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Mobility

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Enhancement of the field-effect mobility of poly(3-hexylthiophene)/functionalized carbon nanotube hybrid transistors

2008 ◽  
Vol 9 (3) ◽  
pp. 317-322 ◽  
Author(s):  
Yeong Don Park ◽  
Jung Ah Lim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Hwa Sung Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Functionalized Carbon Nanotube
Sign in / Sign up

Export Citation Format

Share Document