Investigation of Structural Disorder Using Electron Temperature in VHF-PECVD on Hydrogenated Amorphous Silicon Films for Thin Film Solar Cell Applications

2014 ◽  
Vol 14 (10) ◽  
pp. 8110-8116 ◽  
Author(s):  
Chonghoon Shin ◽  
Jinjoo Park ◽  
Sangho Kim ◽  
Juyeon Jang ◽  
Junhee Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Electron Temperature ◽  
Amorphous Silicon ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Disorder ◽  
Silicon Films ◽  
Hydrogenated Amorphous

scholarly journals Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

2013 ◽  
Vol 62 (20) ◽  
pp. 208801
Author(s):  
Liu Bo-Fei ◽  
Bai Li-Sha ◽  
Wei Chang-Chun ◽  
Sun Jian ◽  
Hou Guo-Fu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Size-Controlled Silicon Quantum Dots Superlattice for Thin-Film Solar Cell Applications

2008 ◽  
Vol 1101 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Silicon Carbide ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Hydrogenated Amorphous ◽  
Size Controlled

AbstractWe prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers for thin-film solar cell applications. Transmission electron microscope (TEM) observation revealed that the size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence (PL) of the Si-QDSLs. From the results of the PL measurement, the bandgap of the Si-QDSLs can be controlled from 1.1 eV to 1.6 eV by varying the diameter of silicon quantum dots. ESR measurement indicated that HPT reduced the defect density in a Si-QDSL from 1.83 ×1019 to 1.67 sup1018 cm-3.

Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

2013 ◽  
Vol 1536 ◽  
pp. 175-180 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Temperatures ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Common Features ◽  
Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

Hydrogenated Amorphous Silicon Based Solar Cells: Optimization Formalism and Numerical Algorithm

2009 ◽  
Vol 1153 ◽  
Author(s):  
Anatoli Shkrebtii ◽  
Yuriy Kryuchenko ◽  
Anaroliy Sachenko ◽  
Igor Sokolovskyi ◽  
Franco Gaspari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Film ◽  
Solar Cell Performance ◽  
Transparent Conducting ◽  
Silicon Based ◽  
Hydrogenated Amorphous

AbstractThin film hydrogenated amorphous silicon (a-Si:H) is widely used in photovoltaics. In order to get the best possible performance of the a-Si:H solar cells it is important to optimize the amorphous film and solar cells in terms their parameters such as mobility gap, p-, i- and n-layer doping levels, electron and hole lifetime and their mobilities, resistance of p-, i- and n-layers, contact grid geometry and parameters of the transparent conducting and antireflecting layers, and others. To maximize thin a-Si:H film based solar cell performance we have developed a general numerical formalism of photoconversion, which takes into account all the above parameters for the optimization. Application of the formalism is demonstrated for typical a-Si:H based solar cells before Staebler-Wronski (SW) light soaking effect. This general formalism is not limited to a-Si:H based systems only, and it can be applied to other types of solar cells as well.

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