scholarly journals Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

2013 ◽  
Vol 62 (20) ◽  
pp. 208801
Author(s):  
Liu Bo-Fei ◽  
Bai Li-Sha ◽  
Wei Chang-Chun ◽  
Sun Jian ◽  
Hou Guo-Fu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Size-Controlled Silicon Quantum Dots Superlattice for Thin-Film Solar Cell Applications

2008 ◽  
Vol 1101 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Silicon Carbide ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Hydrogenated Amorphous ◽  
Size Controlled

AbstractWe prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers for thin-film solar cell applications. Transmission electron microscope (TEM) observation revealed that the size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence (PL) of the Si-QDSLs. From the results of the PL measurement, the bandgap of the Si-QDSLs can be controlled from 1.1 eV to 1.6 eV by varying the diameter of silicon quantum dots. ESR measurement indicated that HPT reduced the defect density in a Si-QDSL from 1.83 ×1019 to 1.67 sup1018 cm-3.

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