Effects of Nitrogen Flow Rate on the Properties of Indium Oxide Thin Films

2013 ◽  
Vol 13 (11) ◽  
pp. 7788-7792
Author(s):  
Shinho Cho ◽  
Moonhwan Kim
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Oxide Thin Films ◽  
Nitrogen Flow Rate

scholarly journals Structure and Properties of Nanocrystalline (TiZr)xN1−xThin Films Deposited by DC Unbalanced Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Yu-Wei Lin ◽  
Chia-Wei Lu ◽  
Ge-Ping Yu ◽  
Jia-Hong Huang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Nitrogen Flow Rate ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm) on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr) ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN). At high nitrogen flow rates (1.0–2.5 sccm), the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

scholarly journals Effect of nitrogen flow rate on the mechanical properties of CVD-deposited SiCN thin films

2019 ◽  
Vol 42 (5) ◽  
Author(s):  
Dhruva Kumar ◽  
Ranjan Kr Ghadai ◽  
Soham Das ◽  
Ashis Sharma ◽  
Bibhu P Swain
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Nitrogen Flow Rate ◽  
Sicn Thin Films

Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films

2009 ◽  
Vol 355 (31-33) ◽  
pp. 1622-1629 ◽  
Author(s):  
M. Anutgan ◽  
T. Aliyeva Anutgan ◽  
E. Ozkol ◽  
I. Atilgan ◽  
B. Katircioglu
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Nitrogen Flow Rate

Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

1993 ◽  
Vol 33 (3-4) ◽  
pp. 204-207 ◽  
Author(s):  
S. Mirzapour ◽  
S.M. Rozati ◽  
M.G. Takwale ◽  
B.R. Marathe ◽  
V.G. Bhide
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Flow Rate ◽  
Air Flow ◽  
Air Flow Rate ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties

Nitrogen flow rate as a new key parameter for the nitridation of electrolyte thin films

2008 ◽  
Vol 179 (21-26) ◽  
pp. 1223-1226 ◽  
Author(s):  
Y. Hamon ◽  
P. Vinatier ◽  
E.I. Kamitsos ◽  
M. Dussauze ◽  
C.P.E. Varsamis ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Nitrogen Flow Rate ◽  
Key Parameter
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