Nanosecond Field-Induced Quenching of the Luminescence from Er-Doped Silicon Nanocrystals

2011 ◽  
Vol 11 (11) ◽  
pp. 9942-9945
Author(s):  
H. X. Liu ◽  
F. J. Meng ◽  
J. M. Sun
Keyword(s):  
Silicon Nanocrystals ◽  
Doped Silicon ◽  
Er Doped

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

2005 ◽  
Vol 86 (15) ◽  
pp. 151914 ◽  
Author(s):  
A. Nazarov ◽  
J. M. Sun ◽  
W. Skorupa ◽  
R. A. Yankov ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Trapping ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Er Doped

Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO 2 Prepared by rf Co-sputtering

2004 ◽  
Vol 21 (7) ◽  
pp. 1333-1336 ◽  
Author(s):  
Zhang Chang-Sheng ◽  
Xiao Hai-Bo ◽  
Chen Zhi-Jun ◽  
Cheng Xin-Li ◽  
Zhang Feng
Keyword(s):  
Heat Treatment ◽  
Doped Silicon ◽  
Er Doped

Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS

Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9963 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
José Manuel Rebled ◽  
Yonder Berencén ◽  
Joan Manel Ramírez ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Silicon Nanoclusters ◽  
Doped Silicon ◽  
Er Doped ◽  
Compositional Properties

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped

Luminescence of Er-doped silicon oxide–zirconia thin films

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Doped Silicon ◽  
Er Doped
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